| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| SVHC Present | |
| Transistor Type |
The ROHM Semiconductor 2SB1184TLR is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It features a maximum collector-emitter breakdown voltage of 50V and can handle a continuous collector current of up to 3A.
Key electrical characteristics include a maximum power dissipation of 1W and a DC current gain (hFE) of at least 180 at 500mA and 3V. The transistor exhibits a Vce saturation of 1V at 200mA and 2A, with a collector cutoff current of 1µA. It operates at frequencies up to 70MHz.
This transistor is available in a CPT3 surface mount package, supplied in Cut Tape (CT) and Digi-Reel® formats. Its robust specifications make it a reliable choice for amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 50 V.
The maximum collector current is 3 A.
The minimum DC current gain is 180 at 500 mA collector current and 3 V collector-emitter voltage.
The transition frequency is 70 MHz.
The maximum power dissipation is 1 W.
The maximum saturation voltage is 1 V at 200 mA base current and 2 A collector current.
The package is CPT3, a surface mount package.