| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,999 pcs
|
3999 pcs | On Request | 1 | On Request | On Request | 0522+ | On Request | On Request | |
|
815 pcs
|
815 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Transistor Type |
The ROHM Semiconductor 2SB1184TLR is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It features a collector-emitter breakdown voltage of 50V and can handle a maximum collector current of 3A.
Key electrical characteristics include a maximum power dissipation of 1W and a DC current gain (hFE) of at least 180 at 500mA and 3V. The transistor exhibits a Vce saturation of 1V at 200mA and 2A, with a low collector cutoff current of 1µA (ICBO).
This component operates at a frequency of 70MHz. It is available in a surface mount package, specifically CPT3, and is supplied in Cut Tape (CT) & Digi-Reel® formats.
Note: This part is marked as 'Not For New Designs'.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The maximum collector current is 3A.
The minimum DC current gain (hFE) is 180 at 500mA and 3V.
The maximum power dissipation is 1W.
The package type is CPT3, suitable for surface mounting.