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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,129 pcs
|
1129 pcs | On Request | 1 | On Request | On Request | 0942+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Pulse) | |
| Collector Cutoff Current (ICBO) @ Vcb=20V | |
| Collector-Base Breakdown Voltage (VCBO) | |
| Collector-Emitter Saturation Voltage (VCEsat) @ Ib=200mA, Ic=2A | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current (IEBO) @ Veb=4V | |
| Emitter-Base Breakdown Voltage (VEBO) | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) @ Vcb=10V, Ie=0A | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Transition Frequency (fT) @ Vce=5V, Ie=0.5A | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE Classification |
The 2SB1182TLR is a PNP epitaxial planar silicon transistor from ROHM Semiconductor designed for medium power switching and amplification applications. It features a collector-emitter breakdown voltage (VCEO) of 32V and a continuous collector current rating of 2A, with a pulse current capability of 3A.
Key electrical characteristics include a low collector-emitter saturation voltage (VCEsat) of typically 0.5V at 2A collector current, a DC current gain (hFE) range of 180 to 390, and a transition frequency (fT) of 100 MHz. The device is capable of dissipating up to 10W of power at a case temperature of 25°C.
The transistor is supplied in a surface mount CPT3 package, which is equivalent to the TO-252-3 (DPak) and SC-63 standards. It is available in tape and reel packaging with a standard quantity of 2500 pieces per reel. The 2SB1182TLR is the complementary part to the NPN 2SD1758 and 2SD1862 transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.47 | $1.47 |
| 10+ | $0.93 | $0.93 |
| 100+ | $0.62 | $0.62 |
| 500+ | $0.48 | $0.48 |
| 1,000+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 32V.
The continuous collector current (DC) rating is 2A, with a pulse current rating of 3A.
It is available in a surface mount CPT3 package, which is equivalent to TO-252-3 (DPak) and SC-63.
The maximum junction temperature (Tj) is 150°C, and the storage temperature range is -55°C to 150°C.
The minimum DC current gain (hFE) is 180 at a test condition of Ic=500mA and Vce=3V.
The part is listed as RoHS3 Compliant, but this information is unverified and should be confirmed with official documentation.
The typical transition frequency (fT) is 100 MHz at Vce=5V and Ie=0.5A.