| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,220 pcs
|
39220 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1182TLQ is a PNP epitaxial planar silicon transistor manufactured by ROHM Semiconductor. It is designed for medium power applications requiring a collector current of up to -2 A DC (-3 A pulse) and a collector-emitter breakdown voltage of -32 V. The device features a low collector-emitter saturation voltage of -0.5 V typical at IC/IB = -2A/-0.2A, contributing to efficient switching performance.
DC current gain (hFE) ranges from 120 to 390 at VCE=-3V, IC=-0.5A. The transistor has a transition frequency of 100 MHz and output capacitance of 50 pF. Power dissipation is rated at 10 W at case temperature 25°C.
The device is offered in the surface-mount CPT3 package (EIAJ SC-63, TO-252 equivalent) with a standard taping quantity of 2500 pieces per reel. Operating junction temperature is up to 150°C, storage from -55 to 150°C. This transistor is complementary to the 2SD1758/2SD1862 NPN types.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.71 | $1.71 |
| 10+ | $1.08 | $1.08 |
| 100+ | $0.72 | $0.72 |
| 500+ | $0.57 | $0.57 |
| 1,000+ | $0.52 | $0.52 |
| 2,500+ | $0.46 | $0.46 |
| 5,000+ | $0.43 | $0.43 |
| 7,500+ | $0.41 | $0.41 |
| 12,500+ | $0.40 | $0.40 |
| 17,500+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum VCEO is -32 V.
It is offered in a CPT3 surface-mount package (EIAJ SC-63, TO-252 equivalent).
The maximum junction temperature is 150°C.
The hFE ranges from 120 to 390 when tested at VCE=-3V, IC=-0.5A.
Typical -0.5 V, maximum -0.8 V at IC/IB = -2A/-0.2A.
The complementary NPN transistors are the 2SD1758 and 2SD1862.