| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation | |
| Thermal Resistance |
The 2SB1182 from JIANGSU CHANGJIANG is a PNP Silicon Epitaxial Transistor. It is designed with features such as low collector saturation voltage and excellent current-to-gain characteristics.
Key electrical specifications include a collector-emitter voltage (VCEO) of -32V, an emitter-base voltage (VEBO) of -5V, and a collector-base voltage (VCBO) of -40V. The continuous collector current (IC) is rated at -2A, with a power dissipation (PD) of 1.5W. The transition frequency (fT) is 100MHz, and the collector output capacitance (Cob) is typically 50pF.
This transistor operates within a junction temperature range of -55℃ to +150℃ and has a storage temperature range of -55℃ to +150℃. The thermal resistance is 83℃/W (Junction to Ambient).
The 2SB1182 is housed in a DPAK (TO-252) surface-mount package. It meets UL 94 V-0 flammability rating and is RoHS3 compliant. Halogen-free options are available upon request.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SB1182 is -32V.
The continuous collector current (IC) rating for the 2SB1182 is -2A.
The transition frequency (fT) of the 2SB1182 transistor is 100MHz.
The 2SB1182 is available in a DPAK (TO-252) package.
The operating junction temperature range for the 2SB1182 is -55℃ to +150℃.