| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,257 pcs
|
1257 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation |
The 2SB1182 from JCET is a PNP Silicon Epitaxial Transistor. It is designed for applications requiring a robust and reliable bipolar transistor. Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -32V and a continuous collector current (IC) of -2A. The device exhibits a typical DC current gain (hFE) ranging from 82 to 390, with specific ranks available.
With a transition frequency (fT) of 100MHz and a collector output capacitance (Cob) of 50pF, the 2SB1182 is suitable for various switching and amplification tasks. The transistor operates within a junction temperature range of -55℃ to +150℃ and has a low collector saturation voltage (VCE(sat)) of -0.8V maximum at -2A.
Packaged in a TO-252 DPak surface-mount case, the 2SB1182 is designed for ease of integration into printed circuit boards. It meets UL 94 V-0 flammability rating and is RoHS compliant. Halogen-free options are available upon request.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SB1182 is -32V.
The continuous collector current (IC) rating for the 2SB1182 is -2A.
The typical transition frequency (fT) of the 2SB1182 is 100MHz.
The 2SB1182 is available in a TO-252 DPak package for surface mounting.
The operating junction temperature range for the 2SB1182 is -55℃ to +150℃.
Yes, the 2SB1182 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SB1182 is 1 Unlimited.