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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,648 pcs
|
3648 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1181TLR is a PNP bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (Vceo) of 80V, a continuous collector current (Ic) of 1A, and a power dissipation (Pd) of 10W. The DC current gain (hFE) is a minimum of 120 at 100mA collector current and 3V collector-emitter voltage. The collector-emitter saturation voltage is a maximum of 400mV at a base current of 50mA and collector current of 500mA. The transition frequency (ft) is 100MHz, making it suitable for switching and amplification applications up to moderate frequencies.
The transistor is housed in a surface mount package compatible with TO-252-3, DPak (2 Leads + Tab), and SC-63 outlines, with a supplier device package designation of CPT3. The operating junction temperature is rated up to 150°C. The device is marked as RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.43 | $1.43 |
| 10+ | $0.90 | $0.90 |
| 100+ | $0.60 | $0.60 |
| 500+ | $0.47 | $0.47 |
| 1,000+ | $0.43 | $0.43 |
| 2,500+ | $0.41 | $0.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
Surface mount TO-252-3, DPak (2 Leads + Tab), SC-63; supplier package CPT3.
150°C.
RoHS3 Compliant (unverified).
120 at 100mA collector current and 3V collector-emitter voltage.
400mV maximum at 50mA base current and 500mA collector current.
100MHz.