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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1181TLQ is a PNP bipolar junction transistor manufactured by ROHM Semiconductor. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a maximum collector-emitter voltage of 80V, a maximum collector current of 1A, and a power dissipation of 10W. The device offers a DC current gain (hFE) of 120 minimum at 100mA and 3V, and a transition frequency of 100 MHz.
The transistor is housed in a TO-252-3 (DPak) surface-mount package with a CPT3 supplier device package designation. It supports an operating junction temperature up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.52 | $1.52 |
| 10+ | $0.96 | $0.96 |
| 100+ | $0.64 | $0.64 |
| 500+ | $0.50 | $0.50 |
| 1,000+ | $0.45 | $0.45 |
| 2,500+ | $0.41 | $0.41 |
| 5,000+ | $0.38 | $0.38 |
| 7,500+ | $0.36 | $0.36 |
| 12,500+ | $0.34 | $0.34 |
| 17,500+ | $0.33 | $0.33 |
| 25,000+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
1A.
10W.
TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package.
150°C.
RoHS3 Compliant (unverified).