| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1143S is a PNP bipolar junction transistor from On Semiconductor designed for general-purpose switching and amplification. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 4A, with a pulse current capability of 6A. The device offers a low collector-emitter saturation voltage of typically 190mV at 2A, contributing to efficient operation in power management circuits.
With a DC current gain (hFE) of 140 minimum at 100mA and 40 minimum at 3A, the transistor provides consistent amplification across a wide current range. The gain-bandwidth product of 150 MHz supports moderate-speed switching applications. The device is housed in a TO-126ML through-hole package, which is compatible with TO-126 and TO-225AA footprints, and is supplied in bags of 200 pieces.
Typical applications include voltage regulators, relay drivers, and lamp drivers. The transistor is lead-free (Pb Free) as verified by the datasheet ordering information.
| Qty | Low | High |
|---|---|---|
| 865+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50V.
The 2SB1143S is supplied in a TO-126ML through-hole package, compatible with TO-126 and TO-225AA footprints.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
The RoHS status is listed as RoHS3 Compliant but is unverified. The datasheet confirms the device is lead-free (Pb Free).
The DC current gain is 140 minimum at Vce=2V, Ic=100mA, and 40 minimum at Vce=2V, Ic=3A.