2SB1132T100R PNP medium power transistor with 32V collector-emitter voltage and 1A collector current. Surface mount in MPT3 package.
Mfr Part #:

2SB1132T100R

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
PNP medium power transistor with 32V collector-emitter voltage and 1A collector current. Surface mount in MPT3 package.
Total Stock: 21,077 pcs
$ Price Range: $0.15 - $0.69

2SB1132T100R Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
20,000 pcs
20000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
1,077 pcs
1077 pcs On Request 1 On Request On Request On Request On Request On Request

2SB1132T100R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current (ICBO)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Vce Sat (Typical/Maximum @ IC/IB=-500 mA/-50 mA)
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Minimum/Maximum @ VCE=-3 V, IC=-0.1 A)

2SB1132T100R Description

Short technical summary and product information.

The 2SB1132T100R is a PNP epitaxial planar silicon transistor from ROHM Semiconductor designed for medium power switching and amplification applications. It features a maximum collector-emitter voltage of -32V and a continuous collector current rating of -1A, with a collector power dissipation of 2W when mounted on a ceramic board.

 

Key electrical characteristics include a DC current gain (hFE) range of 120 to 390 at VCE=-3V and IC=-0.1A, a typical transition frequency of 150 MHz, and a low collector-emitter saturation voltage of -0.2V typical at IC/IB=-500mA/-50mA. The device is supplied in a surface mount MPT3 package (TO-243AA) and is complementary to NPN types 2SD1664 and 2SD1858.

2SB1132T100R Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SB1132T100R PNP Medium Power Transistor
Subcategory: Medium Power Transistor

2SB1132T100R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB1132T100R Estimated Pricing

Qty Low High
1+ $0.69 $0.69
10+ $0.43 $0.43
100+ $0.28 $0.28
500+ $0.21 $0.21
1,000+ $0.19 $0.19
2,000+ $0.17 $0.17
3,000+ $0.16 $0.16
5,000+ $0.15 $0.15
7,000+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1132T100R Features

  • PNP epitaxial planar silicon transistor.
  • Low collector-emitter saturation voltage.
  • 150 MHz typical transition frequency.
  • Surface mount MPT3 package.
  • Complementary to 2SD1664 and 2SD1858.

2SB1132T100R Applications

  • Medium power switching circuits.
  • Driver stages in audio amplifiers.
  • General purpose amplification.
  • Load switching applications.

2SB1132T100R FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SB1132T100R?

The maximum collector-emitter voltage (VCEO) is -32V.

What is the package type for the 2SB1132T100R?

The device is available in a surface mount MPT3 package (TO-243AA).

What is the operating temperature range of the 2SB1132T100R?

The maximum junction temperature is 150°C and the storage temperature range is -55°C to 150°C.

Is the 2SB1132T100R RoHS compliant?

The part is listed as RoHS3 Compliant, but this information is unverified.

What is the DC current gain (hFE) of the 2SB1132T100R?

The DC current gain ranges from 120 to 390 at VCE=-3V and IC=-0.1A.

What is the transition frequency of the 2SB1132T100R?

The typical transition frequency (fT) is 150 MHz at VCE=-5V and IE=50mA.

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