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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |
|
1,300 pcs
|
1300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Maximum @ Pulse, Pw=100 ms) | |
| Collector Cutoff Current | |
| Collector Emitter Saturation Voltage (Typical/Maximum @ IC/IB=-500 mA/-50 mA) | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (Minimum/Maximum @ VCE=-3 V, IC=-0.1 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Typical/Maximum @ VCB=-10 V, IE=0 A, f=1 MHz) | |
| Package Style | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Taping Code | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE Classification |
The 2SB1132T100Q is a PNP epitaxial planar silicon transistor designed for medium-power switching and amplification applications. It features a collector-emitter breakdown voltage of -32V and a continuous DC collector current rating of -1A, with pulse capability up to -2A (100ms single pulse).
The transistor offers low collector-emitter saturation voltage of typically -0.2V at 500mA/50mA, helping to minimize power loss in switching circuits. DC current gain (hFE) is classified as Q rank, with a range of 120 to 270 at VCE=-3V and IC=-0.1A. Transition frequency is typically 150MHz at 5V/50mA.
The 2SB1132T100Q is housed in the ROHM MPT3 package (EIAJ SC-62), which is a surface mount package with a small footprint suitable for compact designs. It is supplied in tape and reel packaging (taping code T100) with 1000 pieces per reel. Complementary NPN devices are the 2SD1664 and 2SD1858.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.19 | $0.19 |
| 2,000+ | $0.17 | $0.17 |
| 3,000+ | $0.16 | $0.16 |
| 5,000+ | $0.15 | $0.15 |
| 7,000+ | $0.15 | $0.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BVCEO) is -32V minimum at IC=-1mA.
The maximum DC collector current is -1A, with pulse capability up to -2A (100ms single pulse).
The device is housed in a TO-243AA surface mount package, also known as ROHM MPT3 (EIAJ SC-62).
The DC current gain (hFE) is classified as Q rank, with a minimum of 120 and maximum of 270 at VCE=-3V and IC=-0.1A.
The typical transition frequency (ft) is 150 MHz at VCE=-5V, IE=50mA, f=30MHz.
The maximum junction temperature is 150°C, with a storage temperature range of -55 to +150°C.
RoHS status is marked as RoHS3 Compliant in low-confidence source data; it has not been independently verified from the manufacturer.