2SB1124S-TD-E PNP bipolar transistor rated for 50V collector-emitter voltage and 3A collector current. Surface mount package PCP (TO-243AA) with low saturation voltage and fast switching.
Mfr Part #:

2SB1124S-TD-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor rated for 50V collector-emitter voltage and 3A collector current. Surface mount package PCP (TO-243AA) with low saturation voltage and fast switching.
Total Stock: 150 pcs
$ Price Range: $0.32

2SB1124S-TD-E Available from 1 distributor

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2SB1124S-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Base-Emitter Saturation Voltage (Vbe Sat)
Collector Current Pulse (ICP)
Collector Cutoff Current (ICBO)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ Ic=3 A, Vce=2 V)
DC Current Gain (hFE) (Minimum/Maximum @ Ic=100 mA, Vce=2 V)
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage (VEBO)
Fall Time (tf)
Frequency
Halogen Free
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Power Dissipation (PC) (@ When mounted on ceramic substrate (250 mm 2×0.8 mm)
SVHC Present
Standard Package Quantity
Storage Temperature
Storage Temperature (Tstg)
Storage Time (tstg)
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Turn-On Time (ton)
Vce Saturation (Max) @ Ib, Ic
Voltage

2SB1124S-TD-E Description

Short technical summary and product information.

The 2SB1124S-TD-E is a PNP bipolar junction transistor from ON Semiconductor designed for general purpose switching and amplification. It features a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 3A, with pulse capability up to 6A.

 

Key electrical characteristics include a DC current gain (hFE) range of 100 to 560 at 100mA/2V, and a low collector-emitter saturation voltage (VCE(sat)) of typically 0.35V at 2A/100mA. The transistor offers a gain-bandwidth product (fT) of 150MHz and fast switching times with typical turn-on time of 70ns.

 

The device is housed in a PCP package (TO-243AA, SOT-89 compatible) for surface mount assembly. It is supplied in tape and reel packaging with 1000 pieces per reel. Power dissipation is 500mW at ambient temperature, or 1.5W when mounted on a ceramic substrate.

 

Typical applications include voltage regulators, relay drivers, lamp drivers, and other electrical equipment requiring medium power switching. The transistor is RoHS3 compliant and has an MSL of 1 (unlimited).

2SB1124S-TD-E Quick Information

Product Type: PNP Bipolar Transistor
Series: 2SB1124
Canonical Name: 2SB1124S-TD-E PNP Bipolar Transistor
Subcategory: Single PNP

2SB1124S-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

2SB1124S-TD-E Estimated Pricing

Qty Low High
942+ $0.32 $0.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1124S-TD-E Features

  • PNP transistor rated for 50V and 3A.
  • Low collector-emitter saturation voltage of 0.35V.
  • Fast switching with 70ns turn-on time.
  • Surface mount PCP package (TO-243AA).
  • DC current gain range 100 to 560.

2SB1124S-TD-E Applications

  • Used in voltage regulator circuits.
  • Ideal for relay and lamp drivers.
  • Suitable for general purpose switching.
  • Applicable in electrical equipment power stages.

2SB1124S-TD-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

50V

What is the maximum collector current?

3A continuous, 6A pulse

What package is this transistor available in?

PCP package (TO-243AA, SOT-89 compatible)

What is the operating temperature range?

Junction temperature up to 150°C, storage temperature -55°C to +150°C

Is this device RoHS compliant?

Yes, RoHS3 compliant (unverified)

What is the DC current gain (hFE)?

100 to 560 at 100mA/2V, minimum 35 at 3A/2V

What is the switching speed?

Turn-on time 70ns, storage time 450ns typical, fall time 35ns

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