2SB1123T-TD-E PNP bipolar transistor, 50V collector-emitter voltage, 2A collector current, 500mW power dissipation. Surface mount package SOT-89-3 (TO-243AA).
Mfr Part #:

2SB1123T-TD-E

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor, 50V collector-emitter voltage, 2A collector current, 500mW power dissipation. Surface mount package SOT-89-3 (TO-243AA).
Total Stock: 218,000 pcs
$ Price Range: $0.26 - $0.87

2SB1123T-TD-E Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
168,000 pcs
168000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
50,000 pcs
50000 pcs On Request 1 On Request On Request 16+14+ On Request On Request

2SB1123T-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SB1123T-TD-E Description

Short technical summary and product information.

The 2SB1123T-TD-E is a PNP bipolar junction transistor from onsemi designed for general purpose switching and amplification. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 2A, with a power dissipation of 500mW. The device offers a minimum DC current gain (hFE) of 200 at 100mA collector current and 2V Vce, and a low saturation voltage of 700mV at 1A collector current. With a transition frequency of 150 MHz, it is suitable for moderate-speed switching applications.

 

The transistor is housed in a surface mount SOT-89-3 package (TO-243AA), which provides a compact footprint for space-constrained designs. The junction operating temperature is rated up to 150°C. This part is commonly used in power management, driver circuits, and portable electronics where a PNP transistor with moderate current and voltage capability is required.

2SB1123T-TD-E Quick Information

Product Type: Bipolar Transistor - PNP
Series: 2SB1123T
Canonical Name: PNP Bipolar Transistor, 50V Vce, 2A Ic, SOT-89-3
Subcategory: PNP

2SB1123T-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB1123T-TD-E Estimated Pricing

Qty Low High
1+ $0.87 $0.87
10+ $0.54 $0.54
100+ $0.35 $0.35
500+ $0.27 $0.27
1,000+ $0.26 $0.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1123T-TD-E Features

  • PNP bipolar transistor with 50V Vce.
  • 2A collector current capability.
  • 500mW power dissipation rating.
  • 150 MHz transition frequency.
  • Surface mount SOT-89-3 package.

2SB1123T-TD-E Applications

  • General purpose switching and amplification.
  • Low power driver circuits.
  • Portable electronic devices.
  • Signal processing and control.

2SB1123T-TD-E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SB1123T-TD-E?

The maximum collector-emitter voltage (Vce) is 50V.

What package does the 2SB1123T-TD-E come in?

It comes in a surface mount TO-243AA (SOT-89-3) package.

What is the operating temperature range of the 2SB1123T-TD-E?

The maximum junction operating temperature is 150°C.

Is the 2SB1123T-TD-E RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified low-confidence data.

What is the DC current gain (hFE) of the 2SB1123T-TD-E?

The minimum hFE is 200 at Ic=100mA and Vce=2V.

What is the saturation voltage of the 2SB1123T-TD-E?

The maximum Vce saturation is 700mV at Ib=50mA and Ic=1A.

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