| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,000 pcs
|
22000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1123S-TD-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a collector-emitter breakdown voltage of 50V, a continuous collector current rating of 2A, and a power dissipation of 500mW. The transistor offers a minimum DC current gain (hFE) of 100 at 100mA collector current and 2V Vce, with a maximum saturation voltage of 700mV at 1A collector current. The transition frequency is 150MHz, making it suitable for low-frequency switching and linear amplification.
The device is housed in a TO-243AA (PCP) surface mount package, which is compact and suitable for automated assembly. The operating junction temperature range is up to 150°C.
This transistor is commonly used in power management circuits, driver stages, and load switching applications where PNP polarity is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.87 | $0.87 |
| 10+ | $0.54 | $0.54 |
| 100+ | $0.35 | $0.35 |
| 1,000+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
It comes in a TO-243AA (PCP) surface mount package.
The maximum junction temperature is 150°C.
It is marked as RoHS3 compliant, but this status is unverified.
The continuous collector current is 2A.
The minimum hFE is 100 at Ic=100mA, Vce=2V.
The transition frequency is 150MHz.