2SB1122T-TD-E 2SB1122T-TD-E is a PNP bipolar transistor from On Semiconductor, rated for -50V VCEO and -1A continuous collector current. It features low VCE saturation voltage and is packaged in a surface-mount SOT-89 (PCP) package.
Mfr Part #:

2SB1122T-TD-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
2SB1122T-TD-E is a PNP bipolar transistor from On Semiconductor, rated for -50V VCEO and -1A continuous collector current. It features low VCE saturation voltage and is packaged in a surface-mount SOT-89 (PCP) package.
Total Stock: 32,000 pcs
$ Price Range: $0.11 - $0.79

2SB1122T-TD-E Available from 1 distributor

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2SB1122T-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Ic)
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Fall Time (tf)
Frequency
Junction Temperature (TJ)
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Power Dissipation (PC)
Standard Package Quantity
Storage Temperature
Supplier Device Package
TSTG (Minimum/Maximum)
Tape & Reel
Transistor Type
Tstg (Typical @ IC=10 IB 1=-10 IB 2=-500 mA)
Turn-On Time (ton)
VBE Saturation Voltage
Vce Saturation (Max) @ Ib, Ic
Voltage
hFE (Minimum @ VCE=-2 V, IC=-1 A)

2SB1122T-TD-E Description

Short technical summary and product information.

The 2SB1122T-TD-E is a PNP bipolar transistor from On Semiconductor designed for general-purpose switching and amplification. It features a maximum collector-emitter voltage (VCEO) of -50V and a continuous collector current rating of -1A. The device utilizes the FBET process for improved performance and is housed in an ultra-small PCP package (SOT-89, SC-62, TO-243AA) suitable for high-density hybrid ICs.

 

Key electrical specifications include a DC current gain (hFE) range of 140 to 400 at -2V, -100mA (rank T), a typical transition frequency of 150 MHz, and a low collector-emitter saturation voltage of -500mV max at 500mA. The transistor can dissipate up to 1.3W when mounted on a ceramic substrate, with a maximum junction temperature of 150°C.

 

Typical applications include voltage regulators, relay drivers, lamp drivers, and other electrical equipment. The component is supplied in tape and reel packaging with 1000 pieces per reel, supporting automated assembly processes.

2SB1122T-TD-E Quick Information

Product Type: PNP Bipolar Transistor
Series: 2SB1122
Canonical Name: 2SB1122T-TD-E (PNP, -50V, -1A, SOT-89)
Subcategory: Single BJT

2SB1122T-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected

2SB1122T-TD-E Estimated Pricing

Qty Low High
1+ $0.79 $0.79
5,000+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1122T-TD-E Features

  • PNP transistor with -50V collector-emitter voltage.
  • Continuous collector current rating of -1A.
  • Low saturation voltage of -500mV max.
  • High transition frequency of 150 MHz.
  • Surface mount SOT-89 (PCP) package.

2SB1122T-TD-E Applications

  • Ideal for voltage regulator circuits.
  • Suitable for relay driver applications.
  • Used in lamp driver designs.
  • General purpose electrical equipment.

2SB1122T-TD-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2SB1122T-TD-E?

The maximum VCEO is -50 V.

What is the package type of the 2SB1122T-TD-E?

The package is PCP, also known as TO-243AA, SC-62, or SOT-89.

What is the operating temperature range?

The junction temperature (Tj) can reach up to 150°C, and storage temperature range is -55 to +150°C.

What is the DC current gain (hFE) of this transistor?

The hFE is 140 to 400 at VCE=-2V, IC=-100mA (rank T). Minimum 30 at IC=-1A.

What is the transition frequency (fT)?

The typical transition frequency is 150 MHz at VCE=-10V, IC=-50mA.

What is the VCE saturation voltage?

The maximum VCE saturation voltage is -500 mV at IC=-500mA, IB=-50mA.

Is the 2SB1122T-TD-E RoHS compliant?

The existing database lists it as RoHS3 compliant, but this is unverified and considered low confidence.

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