2SB1122S-TD-E PNP bipolar transistor with 50V collector-emitter voltage and 1A collector current. Features low VCE(sat) and 150MHz transition frequency.
Mfr Part #:

2SB1122S-TD-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor with 50V collector-emitter voltage and 1A collector current. Features low VCE(sat) and 150MHz transition frequency.
Total Stock: 2,015 pcs
$ Price Range: $0.15 - $0.93

2SB1122S-TD-E Available from 1 distributor

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2,015 pcs
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2SB1122S-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Packing Type
Power
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SB1122S-TD-E Description

Short technical summary and product information.

The 2SB1122S-TD-E is a PNP bipolar junction transistor from On Semiconductor, designed for general-purpose switching and amplifier applications. It features a maximum collector-emitter voltage of -50V and a continuous collector current of -1A, with a pulse current capability of -2A. The device utilizes the FBET process for improved performance, achieving a typical gain-bandwidth product of 150MHz. This transistor offers low collector-emitter saturation voltage (typically -180mV to -500mV at 500mA), making it suitable for voltage regulators, relay drivers, and lamp drivers.

 

The 2SB1122S-TD-E is packaged in the surface-mount PCP package, which is compatible with the JEDEC TO-243AA (SOT-89, SC-62) outline. It has a compact footprint ideal for high-density hybrid IC designs. The device is supplied in tape and reel packaging with 1000 pieces per reel, with packing type TD.

 

Electrical characteristics include a DC current gain (hFE) range of 140 to 400 at -2V, -100mA, and a minimum of 30 at -1A. The transistor exhibits fast switching speeds with a typical turn-on time of 40ns, storage time of 300ns, and fall time of 30ns. Maximum junction temperature is 150°C, with a storage temperature range from -55°C to +150°C. For thermal management, the power dissipation is rated at 1.3W when mounted on a ceramic substrate (250mm²×0.8mm).

2SB1122S-TD-E Quick Information

Product Type: Bipolar Transistor - PNP
Series: 2SB1122
Canonical Name: 2SB1122S-TD-E PNP Bipolar Transistor
Subcategory: Single PNP

2SB1122S-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

2SB1122S-TD-E Estimated Pricing

Qty Low High
1+ $0.93 $0.93
10+ $0.66 $0.66
100+ $0.41 $0.41
500+ $0.28 $0.28
1,000+ $0.24 $0.24
2,000+ $0.21 $0.21
5,000+ $0.18 $0.18
10,000+ $0.17 $0.17
25,000+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1122S-TD-E Features

  • Low collector-emitter saturation voltage (180 mV typical).
  • High transition frequency of 150 MHz.
  • Surface mount PCP (SOT-89) package.
  • DC current gain range of 140 to 400.
  • Fast switching with 40 ns turn-on time.

2SB1122S-TD-E Applications

  • Ideal for voltage regulator circuits.
  • Used in relay and lamp driver applications.
  • Suitable for general-purpose switching.
  • Common in electrical equipment.
  • Enables high-density hybrid IC designs.

2SB1122S-TD-E FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SB1122S-TD-E?

-50V (Vceo).

What package type is the 2SB1122S-TD-E?

Surface mount PCP package (TO-243AA / SOT-89 / SC-62).

What is the operating temperature range?

Storage temperature range from -55°C to +150°C, with maximum junction temperature of 150°C.

What is the DC current gain (hFE) of this transistor?

140 to 400 at Vce=-2V, Ic=-100mA (rank S), and minimum 30 at Ic=-1A.

Is the 2SB1122S-TD-E RoHS compliant?

RoHS3 compliant (unverified, low confidence).

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