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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-to-Emitter Saturation Voltage (VBE(sat)) | |
| Collector Current Pulse (ICP) | |
| Collector Dissipation (Maximum @ When mounted on ceramic substrate (250 mm 2×0.8 mm) | |
| Collector to Base Breakdown Voltage (V(BR)CBO) | |
| Collector to Emitter Breakdown Voltage (V(BR)CEO) | |
| Collector to Emitter Saturation Voltage (VCE(sat)) | |
| Collector-to-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (Minimum @ VCE=-2 V, IC=-1.5 A) | |
| DC Current Gain (Minimum/Maximum @ VCE=-2 V, IC=-100 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter to Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-to-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Junction Temperature (TJ) | |
| Lead Style | |
| Minimum Packing Quantity | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Package Description | |
| Packing Type | |
| Power | |
| Storage Temperature | |
| Storage Temperature (Tstg) | |
| Storage Time (tstg) | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1121T-TD-E is a PNP bipolar transistor from On Semiconductor, designed for applications such as voltage regulators, relay drivers, lamp drivers, and general electrical equipment. It utilizes FBET and MBIT processes to achieve low collector-to-emitter saturation voltage (-0.35V to -0.6V at 1.5A) and fast switching speeds (60ns turn-on, 350ns storage, 25ns fall time). The transistor offers a collector current rating of -2A continuous and -5A pulsed, with a collector dissipation of 500mW (1.3W when mounted on a ceramic substrate). It provides a DC current gain range of 140 to 400 at -100mA and a typical gain-bandwidth product of 150 MHz. The device is packaged in a surface-mount PCP package (TO-243AA, SC-62, SOT-89) and is supplied in tape and reel with 1000 pieces per reel. The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 998+ | $0.30 | $0.30 |
| 1,000+ | $0.23 | $0.23 |
| 2,000+ | $0.21 | $0.21 |
| 3,000+ | $0.20 | $0.20 |
| 4,000+ | $0.13 | $0.13 |
| 5,000+ | $0.19 | $0.19 |
| 7,000+ | $0.18 | $0.18 |
| 10,000+ | $0.17 | $0.17 |
| 25,000+ | $0.16 | $0.16 |
| 50,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -25V, and the maximum collector-base voltage (VCBO) is -30V.
It is available in a surface-mount PCP package, which corresponds to TO-243AA, SC-62, and SOT-89.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
The RoHS status is listed as RoHS3 compliant, but this information is unverified and should be confirmed with the manufacturer.
At VCE=-2V and IC=-100mA, the hFE ranges from 140 to 400. At IC=-1.5A, the minimum hFE is 65.
At IC=-1.5A and IB=-75mA, the VCE(sat) is typically -0.35V and maximum -0.6V.
Typical turn-on time is 60ns, storage time is 350ns, and fall time is 25ns.