2SB1121T-TD-E 2SB1121T-TD-E is a PNP bipolar transistor from On Semiconductor. It features a collector-emitter voltage of -25V, collector current of -2A, and DC current gain of 140 to 400.
Mfr Part #:

2SB1121T-TD-E

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
2SB1121T-TD-E is a PNP bipolar transistor from On Semiconductor. It features a collector-emitter voltage of -25V, collector current of -2A, and DC current gain of 140 to 400.
✓ Total Stock: 7,020 pcs
$ Price Range: $0.13 - $0.30

2SB1121T-TD-E Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,020 pcs
3020 pcs On Request 1 On Request On Request On Request On Request On Request

2SB1121T-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SB1121T-TD-E Description

Short technical summary and product information.

The 2SB1121T-TD-E is a PNP bipolar transistor from On Semiconductor, designed for applications such as voltage regulators, relay drivers, lamp drivers, and general electrical equipment. It utilizes FBET and MBIT processes to achieve low collector-to-emitter saturation voltage (-0.35V to -0.6V at 1.5A) and fast switching speeds (60ns turn-on, 350ns storage, 25ns fall time). The transistor offers a collector current rating of -2A continuous and -5A pulsed, with a collector dissipation of 500mW (1.3W when mounted on a ceramic substrate). It provides a DC current gain range of 140 to 400 at -100mA and a typical gain-bandwidth product of 150 MHz. The device is packaged in a surface-mount PCP package (TO-243AA, SC-62, SOT-89) and is supplied in tape and reel with 1000 pieces per reel. The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.

2SB1121T-TD-E Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: 2SB1121T-TD-E PNP Bipolar Transistor
Subcategory: PNP

2SB1121T-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SB1121T-TD-E Estimated Pricing

Qty Low High
998+ $0.30 $0.30
1,000+ $0.23 $0.23
2,000+ $0.21 $0.21
3,000+ $0.20 $0.20
4,000+ $0.13 $0.13
5,000+ $0.19 $0.19
7,000+ $0.18 $0.18
10,000+ $0.17 $0.17
25,000+ $0.16 $0.16
50,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1121T-TD-E Features

  • PNP bipolar transistor with -25V VCEO.
  • Collector current rating of -2A continuous.
  • Low collector-emitter saturation voltage.
  • High DC current gain from 140 to 400.
  • Fast switching speed with 60ns turn-on time.

2SB1121T-TD-E Applications

  • Used in voltage regulator circuits.
  • Ideal for relay driving applications.
  • Suitable for lamp driver designs.
  • Employed in electrical equipment control.
  • Switching applications in hybrid ICs.

2SB1121T-TD-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the 2SB1121T-TD-E?

The maximum collector-emitter voltage (VCEO) is -25V, and the maximum collector-base voltage (VCBO) is -30V.

What package is the 2SB1121T-TD-E available in?

It is available in a surface-mount PCP package, which corresponds to TO-243AA, SC-62, and SOT-89.

What is the operating temperature range of the 2SB1121T-TD-E?

The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.

Is the 2SB1121T-TD-E RoHS compliant?

The RoHS status is listed as RoHS3 compliant, but this information is unverified and should be confirmed with the manufacturer.

What is the DC current gain (hFE) of the 2SB1121T-TD-E?

At VCE=-2V and IC=-100mA, the hFE ranges from 140 to 400. At IC=-1.5A, the minimum hFE is 65.

What is the collector-emitter saturation voltage of the 2SB1121T-TD-E?

At IC=-1.5A and IB=-75mA, the VCE(sat) is typically -0.35V and maximum -0.6V.

What are the switching times of the 2SB1121T-TD-E?

Typical turn-on time is 60ns, storage time is 350ns, and fall time is 25ns.

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