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SOT89.jpg)
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Current Pulse (ICP) | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ VCE=-2 V, IC=-1.5 A) | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Power Dissipation (PC) (Maximum @ On ceramic substrate (250 mm²×0.8 mm) | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Storage Time (tstg) | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE Classification |
The 2SB1121S-TD-E is a PNP bipolar junction transistor from ON Semiconductor designed for medium-power switching and amplification applications. It features a maximum collector-emitter voltage of -25 V and a continuous collector current rating of -2 A (pulse current up to -5 A). The device offers low collector-emitter saturation voltage (typically -0.35 V at -1.5 A/ -75 mA base current) and a DC current gain range of 140 to 400 at -100 mA, enabling efficient operation in linear and switching circuits.
The transistor incorporates FBET and MBIT processes to achieve fast switching performance with typical turn-on time of 60 ns, storage time of 350 ns, and fall time of 25 ns. The gain-bandwidth product is 150 MHz, making it suitable for moderate-speed switching applications. Power dissipation is rated at 500 mW in free air and up to 1.3 W when mounted on a ceramic substrate.
The 2SB1121S-TD-E is housed in a TO-243AA (SOT-89) surface-mount package with gull-wing leads, offering a compact footprint for high-density designs. It is supplied in tape and reel packaging with 1,000 pieces per reel. Typical applications include voltage regulators, relay drivers, lamp drivers, and general electrical equipment.
| Qty | Low | High |
|---|---|---|
| 998+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -25 V.
It is available in a TO-243AA (SOT-89) surface mount package.
The junction temperature (Tj) is up to 150°C, and storage temperature range is -55°C to +150°C.
According to distributor data, it is marked as RoHS3 compliant, though not explicitly verified in the datasheet.
At VCE=-2V, IC=-100mA, the hFE ranges from 140 to 400, with classification S (140-280) or T (200-400).
The typical gain-bandwidth product is 150 MHz at VCE=-10V, IC=-50mA.
The maximum continuous collector current (IC) is -2 A, and pulse current (ICP) is -5 A.