| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32 pcs
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32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1012 from HIT is a Silicon PNP Epitaxial Transistor. It is designed for use in low frequency power amplifier applications and serves as a complementary pair to the 2SD1376 transistor.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -120V and a maximum collector current (IC) of -1.5A. The device offers a high DC current transfer ratio (hFE) ranging from 2000 to 30000 under typical test conditions (VCE = -3V, IC = -1A). The maximum collector power dissipation (Pc) is rated at 20W at 25°C case temperature.
This transistor is housed in a TO-126 MOD package, suitable for through-hole mounting. Its absolute maximum ratings include a collector-base voltage (VCBO) of -120V and an emitter-base voltage (VEBO) of -7V. The operating junction temperature (Tj) can reach up to 150°C, with storage temperatures ranging from -55°C to +150°C.
The 2SB1012 is suitable for general-purpose amplification and switching applications where PNP characteristics are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SB1012 is -120V.
The maximum continuous collector current (IC) for the 2SB1012 is -1.5A.
The typical DC current transfer ratio (hFE) of the 2SB1012 ranges from 2000 to 30000 when tested at VCE = -3V and IC = -1A.
The maximum power dissipation (Pc) for the 2SB1012 is 20W at a case temperature of 25°C.
The 2SB1012 is supplied in a TO-126 MOD package.
The maximum operating junction temperature (Tj) for the 2SB1012 is 150°C.