| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The 2SB0766ARL is a PNP epitaxial planar bipolar junction transistor from Panasonic Electronic Components, designed for low-frequency output amplification. It features a maximum collector-emitter voltage (Vceo) of -50V and a continuous collector current (Ic) of -1A, with a peak current capability of -1.5A. The device offers a DC current gain (hFE) of 120 minimum at Vce = -10V, Ic = -500mA, and a transition frequency (fT) of 200MHz.
This transistor is housed in a MiniP3-F1 surface mount package (TO-243AA), enabling automated assembly and space-efficient designs. The collector power dissipation is rated at 1W under specified mounting conditions. Complementary NPN parts are 2SD0874 and 2SD0874A.
Typical applications include general-purpose switching and amplification in consumer and industrial electronics. The device is RoHS compliant per Directive 2002/95/EC.
The maximum collector-emitter voltage (Vceo) is -50V.
The maximum continuous collector current (Ic) is -1A, with a peak current (Icp) of -1.5A.
It is supplied in a MiniP3-F1 surface mount package, also known as TO-243AA.
The junction temperature (Tj) is rated up to 150°C, and the storage temperature range is -55°C to +150°C.
Yes, the datasheet indicates compliance with RoHS Directive 2002/95/EC.