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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,094 pcs
|
7094 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Cutoff Current (Icbo) - Maximum | |
| Collector-Base Voltage (Vcbo) (Maximum) | |
| Collector-Base Voltage (Vcbo) (Minimum @ IC = -10 µA, IE = 0) | |
| Collector-Emitter Cutoff Current (Iceo) - Maximum | |
| Collector-Emitter Saturation Voltage (Vce(sat)) (Typical/Maximum @ Ib = 10 mA, Ic = 100 mA) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum/Maximum @ Vce = 10 V, Ic = 2 mA) | |
| Emitter-Base Voltage (Vebo) (Maximum) | |
| Emitter-Base Voltage (Vebo) (Minimum @ IE = -10 µA, IC = 0) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Peak Collector Current (Icp) - Maximum | |
| Power | |
| Storage Temperature | |
| Storage Temperature (Tstg) (Minimum/Maximum) | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB0709ASL is a silicon PNP epitaxial planar transistor designed for general amplification applications. It offers a maximum collector-emitter voltage of 45V and a continuous collector current of 100mA, with a peak current capability of 200mA. The device dissipates up to 200mW of power and provides a high DC current gain (hFE) ranging from 290 to 460 at 2mA collector current and 10V collector-emitter voltage. Typical collector-emitter saturation voltage is 300mV at 100mA, ensuring efficient operation. With a transition frequency of 80MHz, it is suitable for low-frequency amplification and switching circuits.
The transistor is housed in a Mini3-G1 surface-mount package (equivalent to SC-59 and SOT-23-3), enabling compact PCB designs and automated assembly. It is RoHS3 compliant and has a junction temperature rating of 150°C. The complementary NPN part is the 2SD0601A, allowing for push-pull configurations.
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 45V.
It is available in a Mini3-G1 surface-mount package, which is equivalent to SC-59 and SOT-23-3.
The junction temperature can reach up to 150°C, and the storage temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant as stated in the datasheet.
The DC current gain ranges from 290 to 460 at Vce = 10V and Ic = 2mA.
The typical transition frequency (ft) is 80 MHz.
The complementary NPN transistor is the 2SD0601A (also known as 2SD601A).