| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,054 pcs
|
33054 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SAR513P5T100 is a PNP bipolar junction transistor manufactured by ROHM Semiconductor. It is designed for general purpose amplification and switching applications that require a compact surface mount package.
Key electrical characteristics include a collector-emitter breakdown voltage (Vceo) of 50 V and a continuous collector current (Ic) rating of 1 A. The device can dissipate up to 500 mW of power. It features a transition frequency (fT) of 400 MHz, making it suitable for moderate-speed switching circuits. The DC current gain (hFE) is a minimum of 180 when tested at Ic = 50 mA and Vce = 2 V. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 400 mV at Ib = 25 mA and Ic = 500 mA.
The transistor is housed in a TO-243AA surface mount package, also designated as the MPT3 supplier device package. It is rated for operation up to a junction temperature of 150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.65 | $0.65 |
| 10+ | $0.40 | $0.40 |
| 100+ | $0.26 | $0.26 |
| 500+ | $0.19 | $0.19 |
| 1,000+ | $0.17 | $0.17 |
| 2,000+ | $0.15 | $0.15 |
| 5,000+ | $0.13 | $0.13 |
| 10,000+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 50 V.
The maximum continuous collector current (Ic) is 1 A.
The power dissipation (Pd) is 500 mW.
The transition frequency (fT) is 400 MHz.
It comes in a surface mount TO-243AA package (supplier device package MPT3).
The maximum junction temperature (TJ) is 150 °C.
The DC current gain (hFE) is a minimum of 180 at Ic = 50 mA and Vce = 2 V.