BZX84C9V1-13-F
Diodes Incorporated
The Diodes Incorporated BZX84C9V1-13-F is a Zener Diode with a voltage rating of 9.1V and a power dissipation of 0.3W. It is supplied in a surface mount SOT-23 package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14,500 pcs
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14500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ROHM Semiconductor 2SA854S is a PNP silicon bipolar junction transistor (BJT) suitable for switching applications. It features a maximum collector current of 500 mA and a collector-emitter voltage rating of 32 V.
This transistor has a minimum DC current gain (hFE) of 82 and a nominal transition frequency (fT) of 200 MHz. The power dissipation is rated at 0.3 W ambient maximum. It is constructed with silicon and housed in a plastic/epoxy package with through-hole mounting.
The component is supplied in an in-line package style with tin silver copper terminal finish. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the 2SA854S is 0.5 A.
The maximum collector-emitter voltage (Vce) for the 2SA854S is 32 V.
The minimum DC current gain (hFE) for the 2SA854S is 82.
The nominal transition frequency (fT) for the 2SA854S is 200 MHz.
The maximum power dissipation for the 2SA854S at ambient temperature is 0.3 W.
The 2SA854S is a PNP silicon small signal transistor.
The 2SA854S is supplied in an in-line package style for through-hole mounting.