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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,277 pcs
|
5277 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
4,995 pcs
|
4995 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA812B-T1B-AT is a PNP silicon epitaxial bipolar junction transistor manufactured by Renesas. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50 V, a collector current (Ic) rating of 100 mA, and a power dissipation (Pd) of 200 mW. The transistor features a transition frequency (ft) of 180 MHz, making it suitable for high-speed switching. DC current gain (hFE) is minimum 90 at Ic=1mA, Vce=6V. Collector-emitter saturation voltage (Vce(sat)) is maximum 300 mV at Ib=10mA, Ic=100mA.
The device is housed in a surface mount package with options TO-236-3, SC-59, and SOT-23-3, with the supplier device package designated as 3-MINIMOLD. The maximum junction temperature is 150°C.
This transistor is commonly used in low-power switching and signal processing circuits where PNP polarity is required. Its compact surface mount package allows for space-efficient PCB designs.
| Qty | Low | High |
|---|---|---|
| 3,587+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 50 V.
The package is TO-236-3, SC-59, SOT-23-3, with supplier device package 3-MINIMOLD.
The maximum junction temperature (Tj) is 150°C.
The RoHS status is RoHS3 Compliant, but this is unverified.
The transition frequency (ft) is 180 MHz.
The minimum DC current gain (hFE) is 90 at Ic=1mA, Vce=6V.
The maximum collector-emitter saturation voltage (Vce(sat)) is 300 mV at Ib=10mA, Ic=100mA.