2SA812B-T1B-AT PNP silicon epitaxial transistor with 50V collector-emitter breakdown voltage, 100mA collector current, and 200mW power dissipation. Surface mount package SOT-23-3 (3-MINIMOLD).
Mfr Part #:

2SA812B-T1B-AT

Available from 2 distributors
Mfr Name: Renesas
Renesas
PNP silicon epitaxial transistor with 50V collector-emitter breakdown voltage, 100mA collector current, and 200mW power dissipation. Surface mount package SOT-23-3 (3-MINIMOLD).
Total Stock: 10,272 pcs
$ Price Range: $0.08

2SA812B-T1B-AT Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,277 pcs
5277 pcs On Request 1 On Request On Request 09+ On Request On Request
Non-Authorised Inventory information
4,995 pcs
4995 pcs On Request 1 On Request On Request 24+ On Request On Request

2SA812B-T1B-AT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SA812B-T1B-AT Description

Short technical summary and product information.

The 2SA812B-T1B-AT is a PNP silicon epitaxial bipolar junction transistor manufactured by Renesas. It is designed for general-purpose switching and amplification applications.

 

Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50 V, a collector current (Ic) rating of 100 mA, and a power dissipation (Pd) of 200 mW. The transistor features a transition frequency (ft) of 180 MHz, making it suitable for high-speed switching. DC current gain (hFE) is minimum 90 at Ic=1mA, Vce=6V. Collector-emitter saturation voltage (Vce(sat)) is maximum 300 mV at Ib=10mA, Ic=100mA.

 

The device is housed in a surface mount package with options TO-236-3, SC-59, and SOT-23-3, with the supplier device package designated as 3-MINIMOLD. The maximum junction temperature is 150°C.

 

This transistor is commonly used in low-power switching and signal processing circuits where PNP polarity is required. Its compact surface mount package allows for space-efficient PCB designs.

2SA812B-T1B-AT Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: 2SA812B-T1B-AT PNP Silicon Epitaxial Transistor
Subcategory: Single BJT

2SA812B-T1B-AT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SA812B-T1B-AT Estimated Pricing

Qty Low High
3,587+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA812B-T1B-AT Features

  • PNP silicon epitaxial bipolar transistor.
  • Rated for 50V collector-emitter voltage.
  • 100mA collector current capability.
  • 180MHz transition frequency.
  • Surface mount SOT-23-3 package.

2SA812B-T1B-AT Applications

  • General purpose switching applications.
  • Signal amplification circuits.
  • Low power driver stages.
  • High-speed switching designs.

2SA812B-T1B-AT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of this transistor?

The collector-emitter breakdown voltage (Vceo) is 50 V.

What is the package type?

The package is TO-236-3, SC-59, SOT-23-3, with supplier device package 3-MINIMOLD.

What is the operating temperature range?

The maximum junction temperature (Tj) is 150°C.

Is this transistor RoHS compliant?

The RoHS status is RoHS3 Compliant, but this is unverified.

What is the transition frequency?

The transition frequency (ft) is 180 MHz.

What is the DC current gain (hFE)?

The minimum DC current gain (hFE) is 90 at Ic=1mA, Vce=6V.

What is the collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (Vce(sat)) is 300 mV at Ib=10mA, Ic=100mA.

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