2SA812-T1B-A The Renesas 2SA812-T1B-A is a small signal bipolar transistor. It features a high DC current gain and a high voltage rating.
Mfr Part #:

2SA812-T1B-A

Available from 2 distributors
Mfr Name: Renesas
Renesas
The Renesas 2SA812-T1B-A is a small signal bipolar transistor. It features a high DC current gain and a high voltage rating.
✓ Total Stock: 1,293,769 pcs
$ Price Range: $0.99

2SA812-T1B-A Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,291,429 pcs
1291429 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,340 pcs
2340 pcs On Request 1 On Request On Request 2013 On Request On Request

2SA812-T1B-A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type

2SA812-T1B-A Description

Short technical summary and product information.

The Renesas 2SA812-T1B-A is a small signal bipolar transistor designed for general-purpose applications. It offers a high DC current gain, specified as 200 TYP. at V CE = -6.0 V and I C = -1.0 mA, making it suitable for amplification circuits.

 

This transistor has a maximum collector-emitter voltage (V CEO) of -50 V, providing a good voltage handling capability for various electronic designs. It is complementary to the 2SC1623 transistor.

 

The 2SA812-T1B-A is typically supplied in a surface-mount package, facilitating integration into compact electronic assemblies. Its specific package details and mounting requirements should be confirmed for precise application design.

2SA812-T1B-A Quick Information

Product Type: Small Signal Bipolar Transistor
Series: 2SA812
Canonical Name: Renesas 2SA812-T1B-A Small Signal Bipolar Transistor
Subcategory: Bipolar (BJT) - Single

2SA812-T1B-A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SA812-T1B-A Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA812-T1B-A Features

  • High DC current gain of 200 typical.
  • Maximum collector-emitter voltage of -50V.
  • Complementary to 2SC1623 NPN transistor.
  • Surface mount compatible design.
  • RoHS compliant and MSL 1 rated.

2SA812-T1B-A Applications

  • Used in general-purpose amplification circuits.
  • Ideal for push-pull amplifier stages.
  • Suitable for switching applications in low-power systems.
  • Employed in consumer electronics and industrial controls.

2SA812-T1B-A FAQs

4 frequently asked questions generated from this part’s specifications.
What is the DC current gain of the 2SA812-T1B-A transistor?

The DC current gain (h FE) is 200 TYP. at V CE = -6.0 V and I C = -1.0 mA.

What is the maximum collector-emitter voltage for the 2SA812-T1B-A?

The maximum collector-emitter voltage (V CEO) is -50 V.

Is the 2SA812-T1B-A RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the 2SA812-T1B-A?

The MSL is 1 Unlimited.

2SA812-T1B-A Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
BAT54JFILM-HQ
BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
View Part
BZX84C47
BZX84C47
ST
The ST BZX84C47 is a Zener diode with a nominal voltage of 47V and a maximum power dissipation of 350mW. It is supplied in a surface-mount SOT-23 package.
View Part
US1K
US1K
Toshiba
The US1K is an ultrafast recovery rectifier from Toshiba, designed for high-frequency rectification. It features a 800V reverse voltage rating and a 1A average forward current.
View Part
MMBT4401
MMBT4401
ST
The Venkel MMBT4401-EVL is an NPN bipolar transistor designed for surface mount applications. It offers a 40V collector-emitter breakdown voltage and 600mA maximum collector current.
View Part
Home

Categories