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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,358 pcs
|
6358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA733P is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Manufactured by On Semiconductor, this device offers a collector-emitter breakdown voltage (Vceo) of 50V and a continuous collector current (Ic) rating of 500mA. With a DC current gain (hFE) of at least 200 at Ic=1mA and Vce=6V, it provides consistent amplification performance. The transistor has a transition frequency (ft) of 50MHz, making it suitable for low-frequency switching and audio amplification circuits. The maximum collector-emitter saturation voltage (Vce(sat)) is 300mV at Ib=10mA and Ic=100mA, ensuring low power loss in saturation. The device can dissipate up to 625mW of power and operates over a junction temperature range of -55°C to 150°C. It is housed in a TO-92-3 through-hole package, which is easy to mount on printed circuit boards. The 2SA733P is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited), making it suitable for lead-free soldering processes. This transistor is commonly used in audio preamplifiers, driver stages, and general-purpose switching circuits.
50V.
500mA.
TO-92-3 (through-hole).
-55°C to 150°C (junction).
Yes, it is listed as RoHS3 compliant.
Minimum 200 at Ic=1mA, Vce=6V.
50 MHz.