| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
749 pcs
|
749 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature | |
| Termination Style |
The UTC 2SA733 is a PNP epitaxial silicon transistor designed for low-frequency amplifier applications. It features a high DC current gain (hFE) linearity, with values ranging from 90 to 600 under specific test conditions (VCE=-6V, IC=-1mA).
Key electrical characteristics include a collector-emitter breakdown voltage of -50V and a collector-base breakdown voltage of -60V. The transistor can handle a collector current of up to -150mA and has a maximum collector dissipation of 250mW in SOT-23/SOT-323 packages and 1W in TO-92 packages.
The 2SA733 is available in multiple package types, including SOT-23, SOT-323, and TO-92, supporting both surface mount and through-hole mounting.
This transistor is complementary to the 2SC945 and is suitable for various amplification circuits where a PNP type is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BV CEO) for the 2SA733 is -50V.
The maximum collector current (IC) for the 2SA733 is -150mA.
The DC current gain (hFE) for the 2SA733 ranges from 90 to 600 when tested at VCE=-6V and IC=-1mA.
The 2SA733 is available in SOT-23, SOT-323, and TO-92 packages.