2SA2210-1E

The 2SA2210-1E is a PNP bipolar junction transistor manufactured by On Semiconductor. It features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 20A, with a power dissipation of 2W. These specifications make it suitable for medium-power switching and amplification applications.

Electrically, the transistor provides a minimum DC current gain (hFE) of 150 at Ic=1A and Vce=2V, ensuring consistent amplification performance. The typical transition frequency is 140MHz, allowing operation in moderate-frequency circuits. The maximum collector-emitter saturation voltage is 500mV at Ib=350mA and Ic=7A, supporting efficient switching. The maximum junction temperature is 150°C.

The device is housed in a TO-220-3 Full Pack package (TO-220F-3SG), which provides a through-hole mounting solution and thermal performance suitable for heatsinking. The package is widely used for power transistors and allows straightforward integration into printed circuit boards.

Typical applications include general-purpose switching, linear amplifiers, power management, and driver stages in automotive or industrial equipment. The transistor's combination of voltage, current, and gain characteristics offers design flexibility for circuits requiring PNP polarity.