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2SA2206TE12L.F The Toshiba 2SA2206TE12L.F is a PNP silicon bipolar transistor designed for small signal applications. It features a breakdown voltage of 80V and a collector current of 2A.
Mfr Part #:

2SA2206TE12L.F

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SA2206TE12L.F is a PNP silicon bipolar transistor designed for small signal applications. It features a breakdown voltage of 80V and a collector current of 2A.
✓ Total Stock: 200,000 pcs
$ Price Range: $0.99

2SA2206TE12L.F Available from 1 distributor

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✓ Non-Authorised
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Romaks Technologies ✓
Non-Authorised Inventory information
200,000 pcs
On Request
200000 pcs On Request 1 On Request On Request On Request On Request On Request
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2SA2206TE12L.F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2SA2206TE12L.F Description

Short technical summary and product information.

The Toshiba 2SA2206TE12L.F is a single PNP silicon bipolar junction transistor (BJT) suitable for various small signal applications. This component offers a collector-emitter breakdown voltage of 80V and can handle a maximum collector current of 2A.

 

Designed for general-purpose amplification and switching, the 2SA2206TE12L.F is a reliable choice for circuit designers. Its specifications make it suitable for use in a wide range of electronic equipment where a robust and efficient transistor is required.

 

Further details regarding specific operating conditions, package type, and detailed electrical characteristics would typically be found in the manufacturer's datasheet. The part is available in standard packaging quantities, with lead times estimated at 1-2 weeks.

2SA2206TE12L.F Quick Information

Product Type: Bipolar Transistor
Canonical Name: Toshiba 2SA2206TE12L.F Small Signal Bipolar Transistor
Subcategory: Single

2SA2206TE12L.F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SA2206TE12L.F Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA2206TE12L.F Features

  • Maximum collector current of 2A.
  • Minimum collector-emitter breakdown voltage of 80V.
  • PNP silicon small signal bipolar transistor.
  • RoHS3 compliant with REACH unaffected status.
  • MSL level 1 for unlimited floor life.

2SA2206TE12L.F Applications

  • Switching circuits up to 2A collector current
  • PNP transistor for general purpose amplification
  • 80V breakdown voltage for medium-voltage designs
  • Small signal transistor for low power applications
  • Suitable for consumer electronics power management

2SA2206TE12L.F FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the 2SA2206TE12L.F?

The collector-emitter breakdown voltage is 80V.

What is the maximum collector current for the 2SA2206TE12L.F?

The maximum collector current is 2A.

What is the RoHS status of the 2SA2206TE12L.F?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the 2SA2206TE12L.F?

The Moisture Sensitivity Level is 1 Unlimited.

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