| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,000 pcs
|
16000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA2202-TD-E is a PNP bipolar junction transistor manufactured by onsemi. It is designed for general-purpose switching and amplifier applications requiring up to -100V collector-to-emitter voltage and -2A continuous collector current.
Key electrical characteristics include a DC current gain (hFE) of 200 minimum at -100mA collector current, a typical gain-bandwidth product of 300 MHz, and a low collector-emitter saturation voltage of -240mV maximum at 1A. The device is housed in a surface-mount PCP package (TO-243AA, SC-62, SOT-89) with a standard packing quantity of 1000 pieces per reel.
The transistor can dissipate up to 3.5W at case temperature 25°C and operates with a junction temperature up to 150°C. Switching times are specified with a typical turn-on time of 40 ns, storage time of 600 ns, and fall time of 30 ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.91 | $0.91 |
| 10+ | $0.56 | $0.56 |
| 100+ | $0.37 | $0.37 |
| 1,000+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is -100 V.
The continuous collector current is 2 A.
It is housed in a PCP surface-mount package, which corresponds to TO-243AA, SC-62, or SOT-89.
The maximum junction temperature is 150 °C. Storage temperature range is -55 to +150 °C.
The datasheet indicates the part is Pb Free, but RoHS compliance status is unverified.
The typical gain-bandwidth product is 300 MHz at Vce = -10 V and Ic = -500 mA.
Typical turn-on time is 40 ns, storage time is 600 ns, and fall time is 30 ns.