2SA2202-TD-E PNP bipolar transistor rated for -100V collector-emitter voltage and -2A continuous collector current. Offered in a surface-mount PCP (TO-243AA) package.
Mfr Part #:

2SA2202-TD-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor rated for -100V collector-emitter voltage and -2A continuous collector current. Offered in a surface-mount PCP (TO-243AA) package.
Total Stock: 16,000 pcs
$ Price Range: $0.37 - $0.91

2SA2202-TD-E Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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16,000 pcs
16000 pcs On Request 1 On Request On Request On Request On Request On Request

2SA2202-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Base to Emitter Saturation Voltage (Max) @ Ib, Ic
Collector Current (Pulse)
Collector Dissipation (Nominal @ Mounted on ceramic substrate 250 mm² x 0.8 mm)
Collector-to-Base Voltage (VCBO)
Collector-to-Emitter Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain Hfe (Minimum/Typical @ Ic = -100 mA, Vce = -5 V)
Emitter-to-Base Voltage (VEBO)
Fall Time
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Output Capacitance
Packing Type
Power
SVHC Present
Standard Package Quantity
Storage Temperature
Storage Temperature Range
Storage Time
Supplier Device Package
Tape & Reel
Transistor Type
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage

2SA2202-TD-E Description

Short technical summary and product information.

The 2SA2202-TD-E is a PNP bipolar junction transistor manufactured by onsemi. It is designed for general-purpose switching and amplifier applications requiring up to -100V collector-to-emitter voltage and -2A continuous collector current.

 

Key electrical characteristics include a DC current gain (hFE) of 200 minimum at -100mA collector current, a typical gain-bandwidth product of 300 MHz, and a low collector-emitter saturation voltage of -240mV maximum at 1A. The device is housed in a surface-mount PCP package (TO-243AA, SC-62, SOT-89) with a standard packing quantity of 1000 pieces per reel.

 

The transistor can dissipate up to 3.5W at case temperature 25°C and operates with a junction temperature up to 150°C. Switching times are specified with a typical turn-on time of 40 ns, storage time of 600 ns, and fall time of 30 ns.

2SA2202-TD-E Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2SA2202-TD-E PNP Bipolar Transistor
Subcategory: Single BJT

2SA2202-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SA2202-TD-E Estimated Pricing

Qty Low High
1+ $0.91 $0.91
10+ $0.56 $0.56
100+ $0.37 $0.37
1,000+ $0.37 $0.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA2202-TD-E Features

  • PNP bipolar transistor for switching applications.
  • Rated for 100V collector-emitter voltage.
  • 2A continuous and 3A pulse collector current.
  • Low VCE saturation voltage of 240mV.
  • 300 MHz typical gain-bandwidth product.

2SA2202-TD-E Applications

  • Used in DC/DC converter circuits.
  • Drives relays and solenoids.
  • Suitable for lamp and motor drivers.
  • Employed in high-speed switching designs.

2SA2202-TD-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2SA2202-TD-E?

The collector-emitter voltage (VCEO) is -100 V.

What is the maximum continuous collector current?

The continuous collector current is 2 A.

What package does the 2SA2202-TD-E use?

It is housed in a PCP surface-mount package, which corresponds to TO-243AA, SC-62, or SOT-89.

What is the operating junction temperature range?

The maximum junction temperature is 150 °C. Storage temperature range is -55 to +150 °C.

Is the 2SA2202-TD-E RoHS compliant?

The datasheet indicates the part is Pb Free, but RoHS compliance status is unverified.

What is the typical gain-bandwidth product of this transistor?

The typical gain-bandwidth product is 300 MHz at Vce = -10 V and Ic = -500 mA.

What is the switching speed of the 2SA2202-TD-E?

Typical turn-on time is 40 ns, storage time is 600 ns, and fall time is 30 ns.

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