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2SA2174G0L PNP silicon epitaxial planar transistor for general amplification. Rated at 50V collector-emitter voltage and 100mA collector current.
Mfr Part #:

2SA2174G0L

Available from 1 distributors
Mfr Name: Panasonic Electronic Components
Panasonic Electronic Components
PNP silicon epitaxial planar transistor for general amplification. Rated at 50V collector-emitter voltage and 100mA collector current.
✓ Total Stock: 3,000 pcs

2SA2174G0L Available from 1 distributor

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Smaxon Electronics ✓
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3,000 pcs
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3000 pcs On Request 1 On Request On Request 09+ On Request On Request
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2SA2174G0L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2SA2174G0L Description

Short technical summary and product information.

The 2SA2174G0L is a silicon PNP epitaxial planar transistor from Panasonic, designed for general amplification applications. It features a high forward current transfer ratio (hFE) of 160 to 460 at VCE=-10V, IC=-2mA. The device is housed in a compact SSMini3-F3 package (SSMini3 type), enabling downsizing of equipment and automatic insertion via tape packing. Absolute maximum ratings include collector-base voltage of -60V, collector-emitter voltage of -50V, emitter-base voltage of -7V, collector current of -100mA (peak -200mA), and power dissipation of 125mW at 25°C ambient temperature. The junction temperature is rated up to 125°C with storage temperature range of -55°C to +125°C. Electrical characteristics include low collector-base cutoff current (ICBO) of 0.1µA max, transition frequency fT of 80 MHz, and collector output capacitance Cob of 2.2 pF. This transistor is complementary to the 2SC6054G. It is suitable for general-purpose amplification in consumer and industrial electronics where space-saving and reliable performance are required.

2SA2174G0L Quick Information

Product Type: Bipolar (BJT) Transistor
Series: 2SA2174G
Canonical Name: Panasonic 2SA2174G0L Silicon PNP Epitaxial Planar Transistor
Subcategory: Single PNP

2SA2174G0L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: REACH Unaffected

2SA2174G0L Features

  • PNP silicon epitaxial planar transistor.
  • Rated for 50V collector-emitter voltage.
  • 100mA continuous collector current.
  • High DC current gain (hFE 160-460).
  • Compact SSMini3-F3 surface-mount package.

2SA2174G0L Applications

  • General purpose amplification circuits.
  • Signal processing in consumer electronics.
  • Driver stages in audio equipment.
  • Switching applications up to 100mA.

2SA2174G0L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the 2SA2174G0L?

The maximum collector-emitter voltage (VCEO) is -50V, collector-base voltage (VCBO) is -60V, and emitter-base voltage (VEBO) is -7V.

What is the package type of the 2SA2174G0L?

The package is SSMini3-F3 (SSMini3 type) with marking symbol '7L' and pinout: Base, Emitter, Collector.

What is the operating temperature range?

The junction temperature (Tj) is 125°C maximum, and storage temperature (Tstg) ranges from -55°C to +125°C.

Is the 2SA2174G0L RoHS compliant?

Yes, the product complies with the RoHS Directive (EU 2002/95/EC).

What is the DC current gain (hFE) of the 2SA2174G0L?

The DC current gain (hFE) is 160 to 460 at VCE=-10V, IC=-2mA.

What is the collector power dissipation?

The maximum collector power dissipation (PC) is 125mW at Ta=25°C.

What is the complementary NPN transistor for the 2SA2174G0L?

The complementary NPN transistor is the 2SC6054G.

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