| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,748 pcs
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13748 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The 2SA2169-E is a PNP bipolar junction transistor from ON Semiconductor designed for medium-power switching applications. It offers a collector-emitter voltage (VCEO) of -50V and a continuous collector current (IC) of -10A, with a pulse current capability of -13A.
Key electrical characteristics include a DC current gain (hFE) of 200 minimum at VCE=-2V and IC=-1A, with typical gain of 560. The collector-emitter saturation voltage (VCE(sat)) is typically -290mV at IC=-5A and IB=-250mA, enabling low power dissipation. The transistor features a gain bandwidth product (fT) of 200 MHz typical, suitable for high-speed switching.
The device is housed in a TO-251 (TP) through-hole package with short leads, also known as IPak or TO-251AA. It is rated for a maximum power dissipation of 0.95W at 25°C ambient and 20W at case temperature 25°C. The operating junction temperature range is up to 150°C.
Typical applications include relay drivers, lamp drivers, and motor drivers, leveraging the low saturation voltage and high current capacity. The part is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 500+ | $3.08 | $3.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -50V.
The 2SA2169-E is available in a TO-251 (TP) through-hole package, also known as IPak or TO-251AA.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
Yes, the part is listed as RoHS3 compliant.
The DC current gain is 200 minimum, 560 typical, and 700 maximum at VCE=-2V and IC=-1A.
The typical VCE(sat) is -290mV, with a maximum of -580mV at IC=-5A and IB=-250mA.
Typical switching times: turn-on time 40ns, storage time 650ns, fall time 60ns.