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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
43,326 pcs
|
43326 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA2126-TL-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It offers a collector-emitter breakdown voltage (Vceo) of 50 V and a continuous collector current (Ic) of 3 A, making it suitable for medium power switching and amplification applications. The transistor has a power dissipation of 800 mW and a transition frequency (ft) of 390 MHz. It features a minimum DC current gain (hFE) of 200 at 100 mA collector current and 2 V collector-emitter voltage, and a low collector-emitter saturation voltage of 520 mV at 2 A. The device is housed in a surface-mount TO-252-3 (DPak with 2 leads and tab, also known as SC-63) package with a TP-FA supplier device package designation. It operates with a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
| 10+ | $0.79 | $0.79 |
| 100+ | $0.52 | $0.52 |
| 700+ | $0.36 | $0.36 |
| 1,400+ | $0.33 | $0.33 |
| 2,100+ | $0.32 | $0.32 |
| 4,900+ | $0.30 | $0.30 |
| 9,800+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
3 A.
390 MHz.
Minimum 200 at Ic=100 mA and Vce=2 V.
150°C.
TO-252-3, DPak (2 Leads + Tab), SC-63 (supplier package TP-FA).
RoHS3 Compliant (unverified, low confidence).