2SA2126-S-TL-E 2SA2126-S-TL-E is a PNP bipolar junction transistor from ON Semiconductor with 50V collector-emitter breakdown, 3A collector current, 800mW power dissipation, and 390MHz transition frequency.
Mfr Part #:

2SA2126-S-TL-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
2SA2126-S-TL-E is a PNP bipolar junction transistor from ON Semiconductor with 50V collector-emitter breakdown, 3A collector current, 800mW power dissipation, and 390MHz transition frequency.
Total Stock: 18,200 pcs
$ Price Range: $0.21

2SA2126-S-TL-E Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
18,200 pcs
18200 pcs On Request 1 On Request On Request On Request On Request On Request

2SA2126-S-TL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SA2126-S-TL-E Description

Short technical summary and product information.

The 2SA2126-S-TL-E is a PNP bipolar junction transistor manufactured by ON Semiconductor. It features a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 3A. The device can dissipate up to 800mW of power and offers a transition frequency of 390MHz, making it suitable for moderate-speed switching and amplification applications.

 

The transistor has a minimum DC current gain (hFE) of 200 at Ic=100mA and Vce=2V, and a maximum collector-emitter saturation voltage of 520mV at Ib=100mA and Ic=2A. The device is packaged in a surface-mount TO-252-3 (DPak) case, also known as SC-63, with the supplier package designation TP-FA. It can operate at junction temperatures up to 150°C.

 

This component is designed for use in discrete semiconductor circuits requiring a medium-power PNP transistor. Its surface-mount package enables automated assembly in compact designs.

2SA2126-S-TL-E Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SA2126-S-TL-E PNP Bipolar Transistor
Subcategory: Single BJT

2SA2126-S-TL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected

2SA2126-S-TL-E Estimated Pricing

Qty Low High
3,000+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA2126-S-TL-E Features

  • PNP silicon bipolar junction transistor.
  • Maximum collector-emitter voltage 50V.
  • Maximum collector current 3A.
  • Transition frequency 390MHz typical.
  • Surface-mount TO-252-3 package.

2SA2126-S-TL-E Applications

  • Ideal for general purpose switching applications.
  • Used in audio amplification driver stages.
  • Suitable for DC-DC converter circuits.
  • Applicable for motor control pre-driver circuits.

2SA2126-S-TL-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage of the 2SA2126-S-TL-E?

50V.

What package is the 2SA2126-S-TL-E available in?

TO-252-3, DPak (2 Leads + Tab), SC-63, with supplier device package TP-FA.

What is the maximum operating junction temperature?

150°C (TJ).

Is the 2SA2126-S-TL-E RoHS compliant?

The part is listed as RoHS3 Compliant, but this information is unverified.

What is the minimum DC current gain (hFE) of this transistor?

Minimum hFE is 200 at Ic=100mA and Vce=2V.

What is the transition frequency of the 2SA2126-S-TL-E?

390 MHz.

What is the maximum collector current rating?

3 A.

Home
Account

Categories