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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,200 pcs
|
18200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA2126-S-TL-E is a PNP bipolar junction transistor manufactured by ON Semiconductor. It features a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 3A. The device can dissipate up to 800mW of power and offers a transition frequency of 390MHz, making it suitable for moderate-speed switching and amplification applications.
The transistor has a minimum DC current gain (hFE) of 200 at Ic=100mA and Vce=2V, and a maximum collector-emitter saturation voltage of 520mV at Ib=100mA and Ic=2A. The device is packaged in a surface-mount TO-252-3 (DPak) case, also known as SC-63, with the supplier package designation TP-FA. It can operate at junction temperatures up to 150°C.
This component is designed for use in discrete semiconductor circuits requiring a medium-power PNP transistor. Its surface-mount package enables automated assembly in compact designs.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.21 | $0.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
TO-252-3, DPak (2 Leads + Tab), SC-63, with supplier device package TP-FA.
150°C (TJ).
The part is listed as RoHS3 Compliant, but this information is unverified.
Minimum hFE is 200 at Ic=100mA and Vce=2V.
390 MHz.
3 A.