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55 pcs
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55 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA2121 is a triple diffused silicon NPN transistor, specifically recommended for the output stage of audio frequency amplifiers. It is complementary to the 2SA2121 part.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 200V and a continuous collector current (IC) of 15A at 25°C. The device can dissipate up to 220W of power (PC) at 25°C. The DC current gain (hFE) is typically 55 to 160 at 1A and 5V, and 35 at 8A and 5V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 3V at 10A and 1A base current.
This transistor operates within a junction temperature range of 150°C and a storage temperature range of -55°C to 150°C. It comes in a 2-21F1A package, weighing approximately 9.75g.
The 2SA2121 is suitable for applications requiring robust amplification capabilities, particularly in audio systems. Its complementary nature to the 2SA2121 allows for versatile circuit designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SA2121 is 200V.
The maximum continuous collector current (IC) for the 2SA2121 is 15A.
The maximum power dissipation (PC) for the 2SA2121 at 25°C is 220W.
The typical DC current gain (hFE) of the 2SA2121 at VCE = 5V and IC = 1A is between 55 and 160.
The collector-emitter saturation voltage (VCE(sat)) for the 2SA2121 at IC = 10A and IB = 1A is a maximum of 3V.
The transition frequency (fT) of the 2SA2121 is 30 MHz at VCE = 5V and IC = 1A.
The Toshiba 2SA2121 transistor is supplied in a 2-21F1A package.