| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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470 pcs
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470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SA20570P is a PNP silicon epitaxial planar transistor from Panasonic designed for power supply and industrial applications. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 3A, with a peak non-repetitive current of 6A. The device offers high-speed switching with typical storage time of 0.4 µs and fall time of 0.10 µs.
Power dissipation is rated at 20W at case temperature 25°C and 2W at ambient temperature 25°C. The DC current gain (hFE) is typically 160 to 320 at 1A collector current, ensuring good linearity. The collector-emitter saturation voltage is a maximum of 500mV at 3A collector current.
The transistor is supplied in a TO-220-3 Full Pack package (supplier package TO-220D-A1) with a lead spacing of 2.54 mm and through-hole mounting. The package provides a withstand voltage of 5 kV. The junction operating temperature range is up to 150°C.
The maximum collector-emitter voltage (VCEO) is 60V with base open.
The maximum continuous collector current is 3A, with a peak non-repetitive current of 6A.
Power dissipation is 20W at case temperature 25°C and 2W at ambient temperature 25°C.
It is supplied in a TO-220-3 Full Pack package (supplier device package TO-220D-A1) with through-hole mounting.
The maximum junction temperature is 150°C.
Yes, the datasheet states it is RoHS3 compliant.