| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA2056TE85L,F is a PNP bipolar junction transistor (BJT) housed in an SC-61 package. This component is designed for electronic circuits requiring a PNP transistor with specific electrical characteristics.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a maximum continuous collector current of 2A. The device has a power dissipation rating of 625mW, making it suitable for moderate power applications. Its PNP type designation indicates its semiconductor properties and how it functions within a circuit.
This transistor is suitable for various amplification and switching applications in electronic designs. The SC-61 package offers a compact form factor for integration into printed circuit boards. Designers can utilize this component for tasks such as signal amplification, switching, and general-purpose amplification where PNP characteristics are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum voltage for the 2SA2056TE85L,F is 50V.
The maximum continuous current for the 2SA2056TE85L,F is 2A.
The power dissipation of the 2SA2056TE85L,F is 625mW.
The 2SA2056TE85L,F is a PNP bipolar junction transistor.
The 2SA2056TE85L,F is in an SC-61 package.