BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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235 pcs
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235 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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| SVHC Present |
This Toshiba 2SA2056(TE85L,F) is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It features a maximum collector current rating of 2A and a collector-emitter breakdown voltage of 50V. The transistor has a maximum power dissipation of 625mW and a low collector cutoff current of 100nA.
Designed for surface mounting, this component comes in a TSM package, facilitating integration into compact electronic assemblies. Its Vce saturation is specified at 200mV at 33mA collector current and 1A base current. The RoHS status is listed as RoHS3 Compliant, and it has an MSL rating of 1 Unlimited.
This transistor is a component within the broader category of discrete semiconductor products, specifically single bipolar transistors. Its specifications make it suitable for general-purpose amplification and switching applications where a PNP type transistor is required.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the 2SA2056(TE85L,F) is 2 A.
The collector-emitter breakdown voltage (Vceo) for the 2SA2056(TE85L,F) is 50 V.
The maximum power dissipation for the 2SA2056(TE85L,F) is 625 mW.
The 2SA2056(TE85L,F) transistor is supplied in a TSM package for surface mounting.
The RoHS status of the 2SA2056(TE85L,F) is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SA2056(TE85L,F) is 1 Unlimited.