2SA2039-TL-E PNP bipolar transistor rated for 50V collector-emitter voltage and 5A collector current. Surface mount TP-FA package.
Mfr Part #:

2SA2039-TL-E

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor rated for 50V collector-emitter voltage and 5A collector current. Surface mount TP-FA package.
✓ Total Stock: 36,320 pcs
$ Price Range: $0.43 - $1.59

2SA2039-TL-E Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
33,600 pcs
33600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,720 pcs
1720 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

2SA2039-TL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SA2039-TL-E Description

Short technical summary and product information.

The 2SA2039-TL-E is a PNP bipolar junction transistor from ON Semiconductor designed for medium-power switching applications. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 5A, with a pulse current capability of 7.5A. The device offers low collector-emitter saturation voltage, typically 115mV at 1A, enabling efficient operation in DC/DC converters, relay drivers, lamp drivers, and motor drivers.

 

This transistor utilizes ON Semiconductor's FBET and MBIT processes to achieve high-speed switching and large current capacitance. The DC current gain (hFE) ranges from 200 to 560 at Vce=2V and Ic=500mA, providing good amplification linearity. The gain-bandwidth product is 360 MHz typical, supporting switching frequencies in power conversion circuits.

 

The 2SA2039-TL-E is housed in a TP-FA (TO-252) surface mount package with SMD terminations. It is supplied in tape and reel packaging with 700 pieces per reel. The device can dissipate up to 800mW at 25°C ambient temperature and up to 15W when the case temperature is held at 25°C. The maximum junction temperature is 150°C, with a storage temperature range of -55°C to +150°C.

2SA2039-TL-E Quick Information

Product Type: Bipolar Transistor
Series: 2SA2039
Canonical Name: 2SA2039-TL-E PNP Bipolar Transistor
Subcategory: Single BJT

2SA2039-TL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SA2039-TL-E Estimated Pricing

Qty Low High
1+ $1.59 $1.59
10+ $0.82 $0.82
100+ $0.62 $0.62
700+ $0.43 $0.43

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA2039-TL-E Features

  • PNP bipolar transistor, 50V Vceo rating.
  • Continuous collector current up to 5A.
  • Low collector-emitter saturation voltage.
  • High-speed switching with 360 MHz fT.
  • Surface mount TP-FA (TO-252) package.

2SA2039-TL-E Applications

  • Used in DC/DC converter circuits.
  • Ideal for relay and lamp drivers.
  • Suitable for motor driver applications.
  • Employed in high-speed switching designs.

2SA2039-TL-E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) of the 2SA2039-TL-E?

The maximum collector-emitter voltage (Vceo) is 50 V.

What is the maximum collector current rating?

The maximum continuous collector current (Ic) is 5 A, with a pulse current (Icp) rating of 7.5 A.

What package type is the 2SA2039-TL-E available in?

It is available in a TP-FA (TO-252) surface mount package.

What is the operating junction temperature range?

The maximum junction temperature is 150 °C. The storage temperature range is -55 to +150 °C.

What is the DC current gain (hFE) of this transistor?

The DC current gain (hFE) ranges from 200 to 560 at Vce=2V and Ic=500mA.

What is the power dissipation capability?

The power dissipation is 800 mW at Ta=25°C and 15 W at Tc=25°C.

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