| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
656 pcs
|
656 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA2039-H is a PNP bipolar junction transistor from On Semiconductor, designed for medium-power switching and amplification applications. It features a collector-emitter voltage rating of 50V and a continuous collector current of 5A, with a pulse current capability of 7.5A. The transistor offers a low collector-emitter saturation voltage of 430mV at 2A/100mA, enabling efficient operation in switching circuits. With a typical gain-bandwidth product of 360MHz, it is suitable for high-speed switching in DC/DC converters, relay drivers, and motor drivers. The device is packaged in a through-hole TP (TO-251) package, with a mounting type of Through Hole. It is rated for a maximum power dissipation of 800mW at 25°C ambient and 15W at case temperature. The junction temperature range is -55°C to +150°C. The 2SA2039-H is RoHS compliant and has an MSL level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 641+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V (VCEO).
TP (TO-251-3) through-hole package.
Junction temperature up to 150°C, storage temperature -55 to +150°C.
Yes, RoHS3 compliant (unverified).
Minimum 200, maximum 560 at Ic=500mA, Vce=2V.