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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
680,000 pcs
|
680000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Automotive Qualification | |
| Collector Current - Continuous | |
| Collector-Base Cutoff Current (ICBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Minimum/Maximum @ Ic = -1 mA, Vce = -6 V) | |
| ESD Human Body Model | |
| ESD Machine Model | |
| Emitter-Base Cutoff Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Junction Temperature | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| SVHC Present | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA2029M3T5G is a PNP silicon general purpose amplifier transistor from On Semiconductor, designed for low power surface mount applications where board space is critical. It is housed in the SOT-723 package, supporting 8000-piece tape and reel packaging.
Key electrical specifications include a collector-base voltage (Vcbo) of -60 V, collector-emitter voltage (Vceo) of -50 V, and emitter-base voltage (Vebo) of -6 V. The continuous collector current (Ic) is -100 mA, with a maximum power dissipation of 265 mW. DC current gain (hFE) ranges from 120 to 560 at Ic = -1 mA and Vce = -6 V, providing ample amplification capability. The saturation voltage (Vce(sat)) is typically 0.5 V at Ib = -5 mA, Ic = -50 mA, and the transition frequency (fT) is 140 MHz.
Additional features include output capacitance of 3.5 pF, low leakage currents (Icbo -0.5 nA, Iebo -0.1 µA), and ESD protection rated at 2000 V HBM and 200 V MM. The device is Pb-Free and supports a junction temperature of 150 °C with a storage range of -55 °C to 150 °C. NSV prefix variants are AEC-Q101 qualified for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.34 | $0.34 |
| 10+ | $0.23 | $0.23 |
| 100+ | $0.15 | $0.15 |
| 500+ | $0.09 | $0.09 |
| 1,000+ | $0.08 | $0.08 |
| 2,500+ | $0.07 | $0.07 |
| 5,000+ | $0.06 | $0.06 |
| 8,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is -50 V, collector-base voltage (VCBO) is -60 V, and emitter-base voltage (VEBO) is -6 V.
The device is housed in a SOT-723 surface mount package.
The junction temperature is 150 °C maximum, and the storage temperature range is -55 °C to 150 °C.
Yes, the device is Pb-Free and compliant with RoHS requirements.
The DC current gain ranges from 120 to 560 at Ic = -1 mA and Vce = -6 V.
Yes, it has ESD protection of 2000 V Human Body Model and 200 V Machine Model.
The standard part is not automotive qualified, but NSV prefix variants (e.g., NSV2SA2029M3T5G) are AEC-Q101 qualified.