2SA2016-TD-E PNP bipolar transistor with 50V Vceo, 7A collector current, and 330MHz transition frequency. Housed in a surface-mount TO-243AA (PCP) package.
Mfr Part #:

2SA2016-TD-E

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor with 50V Vceo, 7A collector current, and 330MHz transition frequency. Housed in a surface-mount TO-243AA (PCP) package.
Total Stock: 18,020 pcs
$ Price Range: $0.52 - $1.26

2SA2016-TD-E Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,020 pcs
9020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
9,000 pcs
9000 pcs On Request 1 On Request On Request On Request On Request On Request

2SA2016-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SA2016-TD-E Description

Short technical summary and product information.

The 2SA2016-TD-E is a PNP bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose amplification and switching applications requiring a collector-emitter voltage of 50 V and collector current up to 7 A.

 

The transistor features a minimum DC current gain (hFE) of 200 at 500 mA collector current and 2 V collector-emitter voltage. The collector-emitter saturation voltage is limited to 400 mV at a base current of 40 mA and collector current of 2 A. With a transition frequency of 330 MHz, it supports high-frequency switching and amplifier circuits.

 

The device dissipates up to 3.5 W and can operate at a junction temperature of 150°C. It is offered in a TO-243AA surface-mount package (supplier device package PCP), suitable for compact PCB designs.

 

Common applications include power management, load switching, and driver stages in audio and industrial equipment. The PNP polarity makes it suitable for high-side switching and complementary circuit configurations.

2SA2016-TD-E Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: PNP Bipolar Transistor (BJT) - 50V Vceo, 7A Ic
Subcategory: BJT Single

2SA2016-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SA2016-TD-E Estimated Pricing

Qty Low High
1+ $1.26 $1.26
10+ $0.79 $0.79
100+ $0.52 $0.52
1,000+ $0.52 $0.52

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA2016-TD-E Features

  • PNP bipolar transistor rated for 50V.
  • Handles collector current up to 7A.
  • Minimum hFE of 200 ensures stable gain.
  • 330MHz transition frequency for high speed.
  • Surface mount TO-243AA (PCP) package.

2SA2016-TD-E Applications

  • Suitable for power load switching circuits.
  • Use in audio amplifier driver stages.
  • Ideal for high-speed switching applications.
  • Can serve in complementary PNP/NPN pairs.

2SA2016-TD-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The Vceo is 50 V.

What package is the 2SA2016-TD-E available in?

TO-243AA surface-mount package, also designated as PCP.

What is the maximum junction temperature?

150°C.

Is the 2SA2016-TD-E RoHS compliant?

Yes, listed as RoHS3 compliant (unverified).

What is the maximum collector current?

7 A.

What is the transition frequency?

330 MHz.

What is the minimum DC current gain?

200 at Ic=500mA, Vce=2V.

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