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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
457 pcs
|
457 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA2013-TD-E is a PNP bipolar junction transistor from ON Semiconductor, designed for general purpose switching and amplification applications. It features a maximum collector-emitter breakdown voltage of 50V and a continuous collector current rating of 4A, with a power dissipation of 3.5W.
The transistor offers a DC current gain (hFE) of 200 minimum at 500mA collector current and 2V collector-emitter voltage, and a transition frequency of 400MHz, making it suitable for high-speed switching. The collector-emitter saturation voltage is 340mV maximum at 100mA base current and 2A collector current.
The device is housed in a TO-243AA surface-mount package, with a supplier device package designation of PCP. It is designed for surface mount assembly and can operate at junction temperatures up to 150°C. The part is RoHS compliant and has a moisture sensitivity level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.08 | $1.08 |
| 10+ | $0.66 | $0.66 |
| 100+ | $0.44 | $0.44 |
| 1,000+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V
4A
TO-243AA (PCP)
150°C
Yes, RoHS3 compliant (unverified).
400MHz
200 at 500mA, 2V