| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The 2SA2012-TD-E is a PNP bipolar junction transistor from onsemi for switching applications. It has a collector-emitter voltage (VCEO) rating of -30V, a collector-base voltage (VCBO) rating of -30V, and an emitter-base voltage (VEBO) rating of -5V. The device supports a continuous collector current (IC) of -5A and a pulse collector current (ICP) of -8A. Power dissipation is 3.5W at a case temperature of 25°C, or 1.3W when mounted on a ceramic substrate (250mm² x 0.8mm) at an ambient temperature of 25°C.
Key electrical characteristics include a DC current gain (hFE) of 200 to 560 at VCE=-2V and IC=-500mA, and a low collector-emitter saturation voltage of -140mV typical / -210mV maximum at IC=-1.5A and IB=-30mA. Typical gain-bandwidth product (fT) is 350MHz at VCE=-10V and IC=-500mA. Switching times are 50ns turn-on, 270ns storage, and 25ns fall under the datasheet's test conditions. These characteristics make the transistor suitable for relay drivers, lamp drivers, motor drivers, and flash circuits.
The device is housed in a PCP surface-mount package, also designated TO-243AA, SC-62, or SOT-89. The pinout is base (1), collector (2), emitter (3). It is supplied in tape and reel packaging with a minimum packing quantity of 1,000 pieces per reel. The datasheet ordering information indicates Pb-free construction.
The collector-emitter voltage (VCEO) is rated at -30V.
The continuous collector current rating is -5A, with a pulse current rating of -8A.
It is supplied in a PCP surface-mount package, also known as TO-243AA, SC-62, or SOT-89.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
The datasheet ordering information indicates Pb-free construction.
The DC current gain ranges from 200 to 560 at VCE=-2V and IC=-500mA.
Typical turn-on time is 50ns, storage time is 270ns, and fall time is 25ns under the datasheet's test conditions.