2SA1962RTU 2SA1962RTU is a PNP bipolar junction transistor from On Semiconductor. It features a 250V collector-emitter voltage, 17A collector current, and 130W power dissipation in a TO-3P through-hole package.
Mfr Part #:

2SA1962RTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
2SA1962RTU is a PNP bipolar junction transistor from On Semiconductor. It features a 250V collector-emitter voltage, 17A collector current, and 130W power dissipation in a TO-3P through-hole package.
Total Stock: 900 pcs
$ Price Range: $1.51

2SA1962RTU Available from 1 distributor

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900 pcs
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2SA1962RTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SA1962RTU Description

Short technical summary and product information.

The 2SA1962RTU is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for high-voltage and high-current applications, with a collector-emitter voltage rating of 250 V and a continuous collector current of 17 A. The device can dissipate up to 130 W of power, making it suitable for power amplification and switching circuits.

 

The transistor offers a transition frequency of 30 MHz, enabling use in moderate-frequency applications. The DC current gain (hFE) has a minimum value of 55 at Ic=1A and Vce=5V, and the collector-emitter saturation voltage is limited to a maximum of 3 V at Ib=800mA and Ic=8A. The junction operating temperature range spans from -55°C to 150°C.

 

The 2SA1962RTU is housed in a TO-3P-3, SC-65-3 package with through-hole mounting, providing robust thermal performance for power dissipation. The supplier device package is TO-3P. This transistor is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).

2SA1962RTU Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: 2SA1962RTU
Subcategory: Power BJT

2SA1962RTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SA1962RTU Estimated Pricing

Qty Low High
450+ $1.51 $1.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA1962RTU Features

  • PNP bipolar junction transistor.
  • 250V collector-emitter voltage rating.
  • 17A continuous collector current.
  • 130W power dissipation capability.
  • 30 MHz transition frequency.

2SA1962RTU Applications

  • Suitable for high-voltage switching applications.
  • Used in power amplification circuits.
  • Ideal for motor control drivers.
  • Applicable in inverter and converter designs.

2SA1962RTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2SA1962RTU?

The collector-emitter voltage (Vce) is 250 V.

What package does the 2SA1962RTU come in?

The 2SA1962RTU is available in a TO-3P-3, SC-65-3 package with through-hole mounting. The supplier device package is TO-3P.

What is the operating temperature range of the 2SA1962RTU?

The junction operating temperature range is -55°C to 150°C.

Is the 2SA1962RTU RoHS compliant?

The 2SA1962RTU is listed as RoHS3 Compliant.

What is the maximum collector current of the 2SA1962RTU?

The collector current (Ic) is 17 A.

What is the power dissipation rating of the 2SA1962RTU?

The power dissipation (Pd) is 130 W.

What is the transition frequency of the 2SA1962RTU?

The transition frequency (ft) is 30 MHz.

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