| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,003 pcs
|
1003 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The 2SA1943RTU is a PNP epitaxial silicon transistor from onsemi designed for high-power amplification applications. It features a collector-emitter voltage rating of -250V, a continuous collector current of -17A, and a power dissipation of 150W at case temperature 25°C. The device offers a current gain bandwidth product of 30 MHz and a minimum DC current gain (hFE) of 55 at 1A/5V.
This transistor is housed in a TO-264-3 (TO-264AA) through-hole package, providing excellent thermal performance with a junction-to-case thermal resistance of 0.83°C/W. It operates over a junction temperature range of -50°C to 150°C. The 2SA1943RTU is part of a family that includes complementary NPN transistors such as the 2SC5200 and FJL4315.
Typical applications include high-fidelity audio output amplifiers and general-purpose power amplifiers. The device offers wide safe operating area and excellent gain linearity for low total harmonic distortion. The datasheet also notes that the same transistor die is available in other packages with different power ratings.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.74 | $7.74 |
| 10+ | $5.18 | $5.18 |
| 100+ | $4.16 | $4.16 |
| 500+ | $3.69 | $3.69 |
| 1,000+ | $2.97 | $2.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-250V (absolute value 250V for PNP).
TO-264-3 (TO-264AA).
-50°C to 150°C (junction).
The datasheet states Pb-Free and RoHS Compliant, but this is unverified.
Minimum 55 at Vce=-5V, Ic=-1A.
-17A (absolute value 17A).
150W at case temperature 25°C.