2SA1943OTU PNP epitaxial silicon transistor rated for 250V collector-emitter breakdown and 17A continuous collector current. Delivers 150W power dissipation in a TO-264-3 through-hole package.
Mfr Part #:

2SA1943OTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP epitaxial silicon transistor rated for 250V collector-emitter breakdown and 17A continuous collector current. Delivers 150W power dissipation in a TO-264-3 through-hole package.
Total Stock: 2,996 pcs
$ Price Range: $2.66 - $6.09

2SA1943OTU Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,996 pcs
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2SA1943OTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (DC)
Base-Emitter On Voltage (VBE(ON))
Collector Cut-off Current (ICBO)
Collector-Base Breakdown Voltage (BVCBO)
Collector-Emitter Breakdown Voltage (VCEO)
Current
DC Current Gain (Minimum/Maximum @ VCE = -5 V, IC = -1 A)
DC Current Gain (Minimum/Maximum @ VCE = -5 V, IC = -7 A)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cut-off Current (IEBO)
Emitter-Base Breakdown Voltage (BVEBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Case (RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Vce Saturation Voltage (Typical/Maximum @ IC = -8 A, IB = -0.8 A)
Voltage

2SA1943OTU Description

Short technical summary and product information.

The 2SA1943OTU is a PNP epitaxial silicon bipolar junction transistor from On Semiconductor designed for high-power audio and general-purpose amplifier applications. It features a collector-emitter breakdown voltage (VCEO) of -250V and a continuous collector current rating of -17A, making it suitable for demanding output stages.

 

With a maximum power dissipation of 150W at 25°C case temperature and a current gain bandwidth product of 30 MHz, this transistor provides excellent gain linearity for low total harmonic distortion. The DC current gain (hFE) is specified at 80 to 160 at 1A, 5V, ensuring consistent performance in linear amplifier designs.

 

The device is housed in a TO-264-3 (TO-264AA) through-hole package and is Pb-Free and RoHS compliant. It is the complement to the NPN types 2SC5200 and FJL4315, enabling complementary push-pull amplifier configurations.

2SA1943OTU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2SA1943
Canonical Name: 2SA1943OTU PNP Epitaxial Silicon Transistor
Subcategory: Single Bipolar Junction Transistor

2SA1943OTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SA1943OTU Estimated Pricing

Qty Low High
1+ $6.09 $6.09
10+ $3.85 $3.85
100+ $2.99 $2.99
1,000+ $2.66 $2.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA1943OTU Features

  • High voltage rating of -250V VCEO.
  • High current capability of -17A.
  • 150W power dissipation at 25°C.
  • 30 MHz current gain bandwidth product.
  • RoHS compliant and Pb-Free.

2SA1943OTU Applications

  • High-fidelity audio output amplifiers.
  • General purpose power amplifier stages.
  • Complementary push-pull amplifier designs.
  • Linear power supply regulation circuits.

2SA1943OTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2SA1943OTU?

The minimum collector-emitter breakdown voltage (VCEO) is -250V at IC = 10 mA.

What is the maximum collector current rating?

The maximum DC collector current is -17A.

What is the power dissipation of this transistor?

The maximum power dissipation is 150W at a case temperature of 25°C, derating above 25°C at 1.04 W/°C.

What package is the 2SA1943OTU available in?

It is available in a TO-264-3 (TO-264AA) through-hole package.

Is the 2SA1943OTU RoHS compliant?

Yes, the device is Pb-Free and RoHS compliant as stated in the datasheet.

What is the operating temperature range?

The junction and storage temperature range is -50°C to 150°C.

What is the DC current gain (hFE) of the 2SA1943OTU?

The DC current gain (hFE) is 80 to 160 at VCE = -5V and IC = -1A (O classification).

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