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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,996 pcs
|
2996 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (DC) | |
| Base-Emitter On Voltage (VBE(ON)) | |
| Collector Cut-off Current (ICBO) | |
| Collector-Base Breakdown Voltage (BVCBO) | |
| Collector-Emitter Breakdown Voltage (VCEO) | |
| Current | |
| DC Current Gain (Minimum/Maximum @ VCE = -5 V, IC = -1 A) | |
| DC Current Gain (Minimum/Maximum @ VCE = -5 V, IC = -7 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current (IEBO) | |
| Emitter-Base Breakdown Voltage (BVEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation Voltage (Typical/Maximum @ IC = -8 A, IB = -0.8 A) | |
| Voltage |
The 2SA1943OTU is a PNP epitaxial silicon bipolar junction transistor from On Semiconductor designed for high-power audio and general-purpose amplifier applications. It features a collector-emitter breakdown voltage (VCEO) of -250V and a continuous collector current rating of -17A, making it suitable for demanding output stages.
With a maximum power dissipation of 150W at 25°C case temperature and a current gain bandwidth product of 30 MHz, this transistor provides excellent gain linearity for low total harmonic distortion. The DC current gain (hFE) is specified at 80 to 160 at 1A, 5V, ensuring consistent performance in linear amplifier designs.
The device is housed in a TO-264-3 (TO-264AA) through-hole package and is Pb-Free and RoHS compliant. It is the complement to the NPN types 2SC5200 and FJL4315, enabling complementary push-pull amplifier configurations.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.09 | $6.09 |
| 10+ | $3.85 | $3.85 |
| 100+ | $2.99 | $2.99 |
| 1,000+ | $2.66 | $2.66 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (VCEO) is -250V at IC = 10 mA.
The maximum DC collector current is -17A.
The maximum power dissipation is 150W at a case temperature of 25°C, derating above 25°C at 1.04 W/°C.
It is available in a TO-264-3 (TO-264AA) through-hole package.
Yes, the device is Pb-Free and RoHS compliant as stated in the datasheet.
The junction and storage temperature range is -50°C to 150°C.
The DC current gain (hFE) is 80 to 160 at VCE = -5V and IC = -1A (O classification).