2SA1943-O(Q) PNP bipolar transistor with 230V collector-emitter breakdown voltage, 15A collector current, and 150W power dissipation in a TO-3PL through-hole package.
Mfr Part #:

2SA1943-O(Q)

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
PNP bipolar transistor with 230V collector-emitter breakdown voltage, 15A collector current, and 150W power dissipation in a TO-3PL through-hole package.
Total Stock: 3,556 pcs
$ Price Range: $1.36 - $4.26

2SA1943-O(Q) Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,556 pcs
3556 pcs On Request 1 On Request On Request 22+ On Request On Request

2SA1943-O(Q) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SA1943-O(Q) Description

Short technical summary and product information.

The 2SA1943-O(Q) is a PNP bipolar junction transistor manufactured by Toshiba. It features a collector-emitter breakdown voltage (Vceo) of 230V and a continuous collector current rating of 15A, making it suitable for high-voltage, high-current switching and amplification applications. The device can dissipate up to 150W of power, with a transition frequency of 30MHz and a minimum DC current gain (hFE) of 80 at 1A collector current and 5V Vce.

 

This transistor is housed in a TO-3PL through-hole package, also referred to as TO-3P(L), which provides robust thermal performance and mechanical stability. The maximum collector-emitter saturation voltage is 3V at a base current of 800mA and collector current of 8A. The operating junction temperature is rated up to 150°C.

 

Typical applications include power supply circuits, motor control, audio output stages, and other general-purpose high-power switching and linear amplification designs. The through-hole mounting facilitates easy integration into standard PCB layouts and heatsink attachment for thermal management.

2SA1943-O(Q) Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2SA1943
Canonical Name: 2SA1943-O(Q) PNP Bipolar Transistor
Subcategory: Single BJT

2SA1943-O(Q) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SA1943-O(Q) Estimated Pricing

Qty Low High
1+ $4.26 $4.26
10+ $2.81 $2.81
100+ $1.96 $1.96
500+ $1.61 $1.61
1,000+ $1.40 $1.40
5,000+ $1.36 $1.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA1943-O(Q) Features

  • PNP bipolar junction transistor design.
  • 230V collector-emitter breakdown voltage.
  • 15A continuous collector current rating.
  • 150W power dissipation capability.
  • TO-3PL through-hole mounting package.

2SA1943-O(Q) Applications

  • Used in high-power audio amplifiers.
  • Suitable for power supply circuits.
  • Ideal for motor control drivers.
  • Applied in general switching circuits.

2SA1943-O(Q) FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor type of the 2SA1943-O(Q)?

PNP

What is the collector-emitter breakdown voltage (Vceo)?

230 V

What is the maximum collector current (Ic)?

15 A

What is the power dissipation rating?

150 W

What is the package type?

TO-3PL (through-hole)

What is the operating junction temperature?

150°C

Is the 2SA1943-O(Q) RoHS compliant?

RoHS3 Compliant (unverified)

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