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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,556 pcs
|
3556 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA1943-O(Q) is a PNP bipolar junction transistor manufactured by Toshiba. It features a collector-emitter breakdown voltage (Vceo) of 230V and a continuous collector current rating of 15A, making it suitable for high-voltage, high-current switching and amplification applications. The device can dissipate up to 150W of power, with a transition frequency of 30MHz and a minimum DC current gain (hFE) of 80 at 1A collector current and 5V Vce.
This transistor is housed in a TO-3PL through-hole package, also referred to as TO-3P(L), which provides robust thermal performance and mechanical stability. The maximum collector-emitter saturation voltage is 3V at a base current of 800mA and collector current of 8A. The operating junction temperature is rated up to 150°C.
Typical applications include power supply circuits, motor control, audio output stages, and other general-purpose high-power switching and linear amplification designs. The through-hole mounting facilitates easy integration into standard PCB layouts and heatsink attachment for thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.26 | $4.26 |
| 10+ | $2.81 | $2.81 |
| 100+ | $1.96 | $1.96 |
| 500+ | $1.61 | $1.61 |
| 1,000+ | $1.40 | $1.40 |
| 5,000+ | $1.36 | $1.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
PNP
230 V
15 A
150 W
TO-3PL (through-hole)
150°C
RoHS3 Compliant (unverified)