| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,100 pcs
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5100 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Manufacturer Name |
The Toshiba 2SA1941-O(Q) is a PNP bipolar transistor designed for various electronic applications. It offers a maximum DC collector current of -10A and a maximum collector-emitter voltage (Vceo) of -140V. The transistor has a minimum DC current gain (hFE) of 55 and a maximum transition frequency (ft) of 30MHz.
With a maximum power dissipation (Pd) of 100W, this component is suitable for power applications. It operates within a temperature range of -55°C to 150°C. The transistor is housed in a 3-pin TO-3PN package and is designed for through-hole mounting.
Key electrical specifications include a maximum collector-base voltage (VCBO) of 140V and a maximum emitter-base voltage (VEBO) of 5V. The Toshiba 2SA1941-O(Q) is part of the 2SA1941 series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SA1941-O(Q is housed in a TO-3PN through-hole package.
The operating temperature range is -55°C to 150°C.
The maximum DC collector current is -10A.
The maximum collector-emitter voltage is -140V.
The maximum power dissipation is 100W.
The minimum DC current gain is 55.
The maximum transition frequency is 30 MHz.