| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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681 pcs
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681 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA1873-GR is a Pnp bipolar junction transistor (BJT) suitable for discrete semiconductor applications. It features a maximum collector-emitter voltage (VCEO) of 50V and a maximum continuous collector current of 150mA.
With a power dissipation rating of 200mW and a gain-bandwidth product (fT) of 80MHz, this transistor is designed for general-purpose amplification and switching tasks. The device operates within a maximum temperature of 125°C.
Packaged in a compact SOT-353 surface-mount case, the 2SA1873-GR is supplied on a reel, with a factory pack quantity of 3000 units. Its dimensions are 2mm in length and 0.9mm in height, making it suitable for space-constrained designs.
Key electrical characteristics include a minimum DC current gain (hFE) of 200 and a maximum DC current gain of 400. The collector-base voltage (VCBO) is rated at -50V, and the emitter-base voltage (VEBO) is -5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SA1873-GR is 50V.
The continuous collector current is rated at 150mA.
The maximum power dissipation is 200mW.
The maximum operating temperature is 125°C.
The 2SA1873-GR is supplied in a SOT-353 surface-mount package.